A gyrator-based active inductor with a folded circuit structure for wireless communication system-on-a-chip (SoC) applications is proposed herein. The metal-oxide-semiconductor field-effect transistors (MOSFETs) comprise a gyrator and a capacitor, which generate inductive property. The gyrator-based active inductor is thereby created. The negative-resistance compensation technology is utilized to compensate for the losses produced by the transistors and the bias circuitry. Inductance values from 0.02 to 82.20 nH are exhibited. Characteristics of high quality factor and wide inductance range are achieved by the folded active inductor.