A novel double heterojunction bipolar transistor for power amplifiers

Yue Ming Hsin, Chih Hsien Lin, Chang Chung Fan, Man Fang Huang, Kun Chuan Lin

研究成果: Conference contribution

摘要

Novel AlGaAslGaAs double heterojunction bipolar transistors (DHBTs) with composite cellector have been proposed and simulated to replace the conventional AlGaAs/GaAs DHBT. The composite collector combines both wide-bandgap (AlGaAs or InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, AlGaAs (or InGaP) provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage; GaAs provides high electron mobility and thus is able to be employed to reduce on-resistance and transit time. The simulation results demonstrate that novel AlGaAs/GaAs DHBTs have higher f t than conventional DHBT, higher BV CBO than HBTs, and. lower Knee voltage (on-resistance) than DHBT. The results also show the current gains of all -(D)HBTs with difference in the collector are almost identical. Three InGaP/GaAs (D)HBTs with different structures in collector have also been fabricated to confirm the idea of the proposed structures.

原文English
主出版物標題ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings
頁面124-127
頁數4
出版狀態Published - 2000 十二月 1
事件2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000 - Port Dickson, Malaysia
持續時間: 2000 十一月 132000 十一月 15

出版系列

名字IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2000 4th IEEE International Conference on Semiconductor Electronics, ICSE 2000
國家Malaysia
城市Port Dickson
期間00-11-1300-11-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • 引用此

    Hsin, Y. M., Lin, C. H., Fan, C. C., Huang, M. F., & Lin, K. C. (2000). A novel double heterojunction bipolar transistor for power amplifiers. 於 ICSE 2000 - 2000 IEEE International Conference on Semiconductor Electronics, Proceedings (頁 124-127). [932448] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).