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Structural defects of GaN deposited on (111) Si with Gd2O3-related buffer layers
Lo, K. Y., Lin, P. H., Chen, H. J., Gong, J. R., Hsu, H. F., Lee, Y. W. & Chen, W. L., 2017 十一月 1, 於: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 35, 6, 061513.研究成果: Article › 同行評審
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Infrared optical responses of wurtzite InxGa1 - XN thin films with porous surface morphology
Yew, P., Lee, S. C., Ng, S. S., Hassan, H. A., Chen, W. L., Osipowicz, T. & Ren, M. Q., 2016 三月 31, 於: Thin Solid Films. 603, p. 334-341 8 p.研究成果: Article › 同行評審
3 引文 斯高帕斯(Scopus) -
Polarized infrared reststrahlen features of wurtzite inGaN thin film
Yew, P., Cheong, L. S., Shiong, N. S., Leong, Y. T., Abu Hassan, H. & Chen, W. L., 2016, Main Tendencies in Applied Materials Science. Azhan, H., Azman, K., Osman, N., Hassan, O. H., Abd-Shukor, R., Deraman, M., Kong, W., Aspanut, Z., Halimah, M. K., Azis, R. S., Azis, R. S., Sahar, M. R. & Halim, S. A. (編輯). Trans Tech Publications Ltd, p. 614-619 6 p. (Materials Science Forum; 卷 846).研究成果: Conference contribution
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The finite element analysis study of the laser lift-off (LLO) of III-nitride compound
Wang, Y. H. & Chen, W. L., 2013 八月 8, Intelligent Technologies and Engineering Systems. p. 821-827 7 p. (Lecture Notes in Electrical Engineering; 卷 234 LNEE).研究成果: Conference contribution
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Optical characterization of an asymmetric quantum well structure for broadband laser array application
Chen, W-L., 2011 四月 1, 於: Japanese Journal of Applied Physics. 50, 4 PART 2, 04DG16.研究成果: Article › 同行評審