Abstract
We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
| Original language | English |
|---|---|
| Pages (from-to) | 687-689 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2000 Jul 31 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers. / Lin, Yow-Jon; Tsai, Chang Da; Lyu, Yen Tang; Lee, Ching Ting.
In: Applied Physics Letters, Vol. 77, No. 5, 31.07.2000, p. 687-689.Research output: Contribution to journal › Article
TY - JOUR
T1 - X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers
AU - Lin, Yow-Jon
AU - Tsai, Chang Da
AU - Lyu, Yen Tang
AU - Lee, Ching Ting
PY - 2000/7/31
Y1 - 2000/7/31
N2 - We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
AB - We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.
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UR - http://www.scopus.com/inward/citedby.url?scp=0000040230&partnerID=8YFLogxK
U2 - 10.1063/1.127086
DO - 10.1063/1.127086
M3 - Article
AN - SCOPUS:0000040230
VL - 77
SP - 687
EP - 689
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
ER -