X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

Yow-Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

Original languageEnglish
Pages (from-to)687-689
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number5
DOIs
Publication statusPublished - 2000 Jul 31

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photoelectron spectroscopy
disulfides
x ray spectroscopy
passivity
x rays
sulfur
chemistry
nitrogen
oxides
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Yow-Jon ; Tsai, Chang Da ; Lyu, Yen Tang ; Lee, Ching Ting. / X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers. In: Applied Physics Letters. 2000 ; Vol. 77, No. 5. pp. 687-689.
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X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers. / Lin, Yow-Jon; Tsai, Chang Da; Lyu, Yen Tang; Lee, Ching Ting.

In: Applied Physics Letters, Vol. 77, No. 5, 31.07.2000, p. 687-689.

Research output: Contribution to journalArticle

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