X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

Yow-Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee

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Abstract

We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

Original languageEnglish
Pages (from-to)687-689
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number5
DOIs
Publication statusPublished - 2000 Jul 31

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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