X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

Yow-Jon Lin; Chang Da Tsai; Yen Tang Lyu; Ching Ting Lee

doi:10.1063/1.127086

X-ray photoelectron spectroscopy study of (NH₄)₂S_x-treated Mg-doped GaN layers

Yow-Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Article

47 Citations (Scopus)

Abstract

We present here the passivation mechanism and the chemistry of an (NH₄)₂S_x-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH₄)₂S_x treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

Original language	English
Pages (from-to)	687-689
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	5
DOIs	https://doi.org/10.1063/1.127086
Publication status	Published - 2000 Jul 31

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.127086

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Lin, Y-J., Tsai, C. D., Lyu, Y. T., & Lee, C. T. (2000). X-ray photoelectron spectroscopy study of (NH₄)₂S_x-treated Mg-doped GaN layers. Applied Physics Letters, 77(5), 687-689. https://doi.org/10.1063/1.127086

@article{bfceef17ac5749c896f082486fb65855,

title = "X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers",

abstract = "We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.",

author = "Yow-Jon Lin and Tsai, {Chang Da} and Lyu, {Yen Tang} and Lee, {Ching Ting}",

year = "2000",

month = jul,

day = "31",

doi = "10.1063/1.127086",

language = "English",

volume = "77",

pages = "687--689",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "5",

}

TY - JOUR

T1 - X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

AU - Lin, Yow-Jon

AU - Tsai, Chang Da

AU - Lyu, Yen Tang

AU - Lee, Ching Ting

PY - 2000/7/31

Y1 - 2000/7/31

N2 - We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

AB - We present here the passivation mechanism and the chemistry of an (NH4)2Sx-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH4)2Sx treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

UR - http://www.scopus.com/inward/record.url?scp=0000040230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000040230&partnerID=8YFLogxK

U2 - 10.1063/1.127086

DO - 10.1063/1.127086

M3 - Article

AN - SCOPUS:0000040230

VL - 77

SP - 687

EP - 689

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -