X-ray photoelectron spectroscopy study of (NH4)2Sx-treated Mg-doped GaN layers

Yow-Jon Lin; Chang Da Tsai; Yen Tang Lyu; Ching Ting Lee

doi:10.1063/1.127086

X-ray photoelectron spectroscopy study of (NH₄)₂S_x-treated Mg-doped GaN layers

Yow-Jon Lin, Chang Da Tsai, Yen Tang Lyu, Ching Ting Lee

Graduate Institute of Photonics

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46 Citations (Scopus)

Abstract

We present here the passivation mechanism and the chemistry of an (NH₄)₂S_x-treated Mg-doped GaN surface examined by using x-ray photoelectron spectroscopy. The native oxide on the GaN surface can be removed by the (NH₄)₂S_x treatment process. The S atoms not only bond as elemental sulfur and disulfides, but occupy nitrogen-related vacancies.

Original language	English
Pages (from-to)	687-689
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	5
DOIs	https://doi.org/10.1063/1.127086
Publication status	Published - 2000 Jul 31

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y-J., Tsai, C. D., Lyu, Y. T., & Lee, C. T. (2000). X-ray photoelectron spectroscopy study of (NH₄)₂S_x-treated Mg-doped GaN layers. Applied Physics Letters, 77(5), 687-689. https://doi.org/10.1063/1.127086

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10.1063/1.127086