Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology

Jau Jr Lin; Kun Hin To; Bill Brown; Donna Hammock; Michael Majerus; Marcel Tutt; W. Margaret Huang

doi:10.1109/CSICS.2008.32

Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology

Jau Jr Lin, Kun Hin To, Bill Brown, Donna Hammock, Michael Majerus, Marcel Tutt, W. Margaret Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S₁₁|, |S₂₂) < -l0dB. The design was targeted that |S₂₁| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.

Original language	English
Title of host publication	2008 IEEE CSIC Symposium
Subtitle of host publication	GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008
DOIs	https://doi.org/10.1109/CSICS.2008.32
Publication status	Published - 2008 Dec 29
Event	2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 - Monterey, CA, United States Duration: 2008 Oct 12 → 2008 Oct 15

Publication series

Name	2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Other

Other	2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008
Country	United States
City	Monterey, CA
Period	08-10-12 → 08-10-15

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All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Lin, J. J., To, K. H., Brown, B., Hammock, D., Majerus, M., Tutt, M., & Huang, W. M. (2008). Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology. In 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008 [4674487] (2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008). https://doi.org/10.1109/CSICS.2008.32

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abstract = "This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S11|, |S22) < -l0dB. The design was targeted that |S21| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.",

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Lin, JJ, To, KH, Brown, B, Hammock, D, Majerus, M, Tutt, M & Huang, WM 2008, Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology. in 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008., 4674487, 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008, 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008, Monterey, CA, United States, 08-10-12. https://doi.org/10.1109/CSICS.2008.32

Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology. / Lin, Jau Jr; To, Kun Hin; Brown, Bill; Hammock, Donna; Majerus, Michael; Tutt, Marcel; Huang, W. Margaret.

2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008. 2008. 4674487 (2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Access to Document

10.1109/CSICS.2008.32