Abstract
This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S11|, |S22) < -l0dB. The design was targeted that |S21| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.
Original language | English |
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Title of host publication | 2008 IEEE CSIC Symposium |
Subtitle of host publication | GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008 |
DOIs | |
Publication status | Published - 2008 Dec 29 |
Event | 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 - Monterey, CA, United States Duration: 2008 Oct 12 → 2008 Oct 15 |
Publication series
Name | 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008 |
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Other
Other | 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, 2008 |
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Country | United States |
City | Monterey, CA |
Period | 08-10-12 → 08-10-15 |
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All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
}
Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology. / Lin, Jau-Jr/jau Jr/jau; To, Kun Hin; Brown, Bill; Hammock, Donna; Majerus, Michael; Tutt, Marcel; Huang, W. Margaret.
2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008. 2008. 4674487 (2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology
AU - Lin, Jau-Jr/jau Jr/jau
AU - To, Kun Hin
AU - Brown, Bill
AU - Hammock, Donna
AU - Majerus, Michael
AU - Tutt, Marcel
AU - Huang, W. Margaret
PY - 2008/12/29
Y1 - 2008/12/29
N2 - This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S11|, |S22) < -l0dB. The design was targeted that |S21| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.
AB - This paper reports a LNA and a PA for IEEE802.15 WAPN application in a 90-nm LP (low power) 1P6M CMOS technology. The LNA has a 13-dB peak gain and a 7-dB NF and the PA has a 9.8-dB gain and a +11.2-dBm saturated output power. Both LNA and PA have achieved input and output matching bandwidths exceeding 10GHz, while the reflection coefficient (|S11|, |S22) < -l0dB. The design was targeted that |S21| variation within 2dB from the peak over the frequencies and the measured 2-dB bandwidth of both LNA and PA are also exceeding 14GHz. Both LAN and PA should be able to accommodate 9-GHz bandwidth requirement of IEEE802.15 WPAN application. A high performance PA and LNA are achieved with this backend process.
UR - http://www.scopus.com/inward/record.url?scp=57849135150&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57849135150&partnerID=8YFLogxK
U2 - 10.1109/CSICS.2008.32
DO - 10.1109/CSICS.2008.32
M3 - Conference contribution
AN - SCOPUS:57849135150
SN - 9781424419401
T3 - 2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008
BT - 2008 IEEE CSIC Symposium
ER -