Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

R. H. Horng, D. S. Wuu, C. H. Seieh, W. C. Peng, Man-Fang Huang, S. J. Tsai, J. S. Liu

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Abstract

The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.

Original languageEnglish
Pages (from-to)907-910
Number of pages4
JournalJournal of Electronic Materials
Volume30
Issue number8
Publication statusPublished - 2001 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Horng, R. H., Wuu, D. S., Seieh, C. H., Peng, W. C., Huang, M-F., Tsai, S. J., & Liu, J. S. (2001). Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers. Journal of Electronic Materials, 30(8), 907-910.