Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

R. H. Horng, D. S. Wuu, C. H. Seieh, W. C. Peng, Man-Fang Huang, S. J. Tsai, J. S. Liu

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.

Original languageEnglish
Pages (from-to)907-910
Number of pages4
JournalJournal of Electronic Materials
Volume30
Issue number8
Publication statusPublished - 2001 Jan 1

Fingerprint

Wafer bonding
Light emitting diodes
Mirrors
light emitting diodes
wafers
mirrors
Substrates
Electric potential
electric potential
power efficiency
Electric lamps
luminous intensity
luminaires
degradation
reflectance
Degradation
output

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Horng, R. H., Wuu, D. S., Seieh, C. H., Peng, W. C., Huang, M-F., Tsai, S. J., & Liu, J. S. (2001). Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers. Journal of Electronic Materials, 30(8), 907-910.
Horng, R. H. ; Wuu, D. S. ; Seieh, C. H. ; Peng, W. C. ; Huang, Man-Fang ; Tsai, S. J. ; Liu, J. S. / Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers. In: Journal of Electronic Materials. 2001 ; Vol. 30, No. 8. pp. 907-910.
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abstract = "The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98{\%} of the dice with operating voltages <2.2 V at 20 mA and 85{\%} of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21{\%} with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.",
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Horng, RH, Wuu, DS, Seieh, CH, Peng, WC, Huang, M-F, Tsai, SJ & Liu, JS 2001, 'Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers', Journal of Electronic Materials, vol. 30, no. 8, pp. 907-910.

Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers. / Horng, R. H.; Wuu, D. S.; Seieh, C. H.; Peng, W. C.; Huang, Man-Fang; Tsai, S. J.; Liu, J. S.

In: Journal of Electronic Materials, Vol. 30, No. 8, 01.01.2001, p. 907-910.

Research output: Contribution to journalArticle

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T1 - Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

AU - Horng, R. H.

AU - Wuu, D. S.

AU - Seieh, C. H.

AU - Peng, W. C.

AU - Huang, Man-Fang

AU - Tsai, S. J.

AU - Liu, J. S.

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N2 - The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.

AB - The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.

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