Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

C. H. Seieh, R. H. Horng, Man-Fang Huang, D. S. Wuu, W. C. Peng, S. J. Tsai, J. S. Liu

Research output: Contribution to journalArticle

Abstract

The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

Original languageEnglish
Pages (from-to)854-855
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - 2000 Jan 1

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Wafer bonding
Light emitting diodes
Mirrors
Substrates
Joule heating
Thermal conductivity
Heat treatment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.",
author = "Seieh, {C. H.} and Horng, {R. H.} and Man-Fang Huang and Wuu, {D. S.} and Peng, {W. C.} and Tsai, {S. J.} and Liu, {J. S.}",
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Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer. / Seieh, C. H.; Horng, R. H.; Huang, Man-Fang; Wuu, D. S.; Peng, W. C.; Tsai, S. J.; Liu, J. S.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 2, 01.01.2000, p. 854-855.

Research output: Contribution to journalArticle

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T1 - Wafer bonding of 50 mm diameter mirror substrate to algainp light-emitting diode wafer

AU - Seieh, C. H.

AU - Horng, R. H.

AU - Huang, Man-Fang

AU - Wuu, D. S.

AU - Peng, W. C.

AU - Tsai, S. J.

AU - Liu, J. S.

PY - 2000/1/1

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AB - The feasibility of 50-mm wafer bonding AlGaInP/LED with mirror substrate is demonstrated using a bonding process under a low temperature and short thermal treatment duration. Si substrate with good thermal conductivity is used as the mirror substrate to prevent LED device from joule heating. The performance of the mirror substrate AlGaInP LED is much better than that of the absorbing substrate LED.

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