Abstract
An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.
Original language | English |
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Pages (from-to) | 2357-2359 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 39 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2000 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)