An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2000 Dec 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)