Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes

Ray Hua Horng, Dong Sing Wuu, Sun Chin Wei, Chung Yang Tseng, Man Fang Huang, Kuo Hsiung Chang, Pin Hui Liu, Kun Chuan Lin

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Abstract

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.

Original languageEnglish
Pages (from-to)2357-2359
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number4 B
Publication statusPublished - 2000 Dec 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Horng, R. H., Wuu, D. S., Wei, S. C., Tseng, C. Y., Huang, M. F., Chang, K. H., Liu, P. H., & Lin, K. C. (2000). Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(4 B), 2357-2359.