Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes

Ray Hua Horng; Dong Sing Wuu; Sun Chin Wei; Chung Yang Tseng; Man Fang Huang; Kuo Hsiung Chang; Pin Hui Liu; Kun Chuan Lin

doi:10.1143/jjap.39.2357

Wafer-bonded AlGaInP/Au/AuBe/SiO₂/Si light-emitting diodes

Ray Hua Horng, Dong Sing Wuu, Sun Chin Wei, Chung Yang Tseng, Man Fang Huang, Kuo Hsiung Chang, Pin Hui Liu, Kun Chuan Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO₂Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.

Original language	English
Pages (from-to)	2357-2359
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2357
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes",

abstract = "An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.",

author = "Horng, {Ray Hua} and Wuu, {Dong Sing} and Wei, {Sun Chin} and Tseng, {Chung Yang} and Huang, {Man Fang} and Chang, {Kuo Hsiung} and Liu, {Pin Hui} and Lin, {Kun Chuan}",

year = "2000",

doi = "10.1143/jjap.39.2357",

language = "English",

volume = "39",

pages = "2357--2359",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Wafer-bonded AlGaInP/Au/AuBe/SiO₂/Si light-emitting diodes. / Horng, Ray Hua; Wuu, Dong Sing; Wei, Sun Chin; Tseng, Chung Yang; Huang, Man Fang; Chang, Kuo Hsiung; Liu, Pin Hui; Lin, Kun Chuan.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 4 B, 2000, p. 2357-2359.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Wafer-bonded AlGaInP/Au/AuBe/SiO2/Si light-emitting diodes

AU - Horng, Ray Hua

AU - Wuu, Dong Sing

AU - Wei, Sun Chin

AU - Tseng, Chung Yang

AU - Huang, Man Fang

AU - Chang, Kuo Hsiung

AU - Liu, Pin Hui

AU - Lin, Kun Chuan

PY - 2000

Y1 - 2000

N2 - An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.

AB - An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2Si mirror substrate has been successfully fabricated by the wafer bonding technique. The mirror-substrate LED is capable of emitting luminous intensity of 90 mcd under 20 mA injection. It is clearly far superior to the conventional absorbed-substrate LED with a distributed Bragg reflector structure (≤ 1 mcd). This device exhibits normal p-n diode behavior with a forward voltage of less than 2V operating at 20 mA. The leakage current is about 3 nA under a 36 V reverse bias. This result indicates that the wafer bonding technique does not adversely affect the I-V characteristic of the LED device. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and the Si substrate providing a good heat sink solve the joule heating problem inherent in conventional LEDs.

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