Understanding nonpolar GaN growth through kinetic Wulff plots

Qian Sun, Christopher D. Yerino, Tsung Shine Ko, Yong Suk Cho, In Hwan Lee, Jung Han, Michael E. Coltrin

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Abstract

In this paper we provide explanations to the complex growth phenomena of GaN heteroepitaxy on nonpolar orientations using the concept of kinetic Wulff plots (or v -plots). Quantitative mapping of kinetic Wulff plots in polar, semipolar, and nonpolar angles are achieved using a differential measurement technique from selective area growth. An accurate knowledge of the topography of kinetic Wulff plots serves as an important stepping stone toward model-based control of nonpolar GaN growth. Examples are illustrated to correlate growth dynamics based on the kinetic Wulff plots with commonly observed features, including anisotropic nucleation islands, highly striated surfaces, and pentagonal or triangular pits.

Original languageEnglish
Article number093523
JournalJournal of Applied Physics
Volume104
Issue number9
DOIs
Publication statusPublished - 2008 Nov 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Sun, Q., Yerino, C. D., Ko, T. S., Cho, Y. S., Lee, I. H., Han, J., & Coltrin, M. E. (2008). Understanding nonpolar GaN growth through kinetic Wulff plots. Journal of Applied Physics, 104(9), [093523]. https://doi.org/10.1063/1.3009969