Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of Si O2 (20 nm) Ta (5 nm) Cu (20 nm) Ta (5 nm) NiFe (2 nm) Cu (5 nm) MnIr (10 nm) CoFe (4 nm) Al-O (1.5 nm) CoFe (4 nm) NiFe (20 nm) Ta (50 nm) was measured by conducting atomic force microscopy to obtain I-V curves. Tunnel magnetoresistance was characterized from these nonlinear I-V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)