Tunneling magnetoresistance of magnetic tunneling junction cell measured by conducting atomic force microscopy with ramping dc bias voltage rate

Min Fong Shu, A. Canizo-Cabrera, Chih Cheng Hsu, C. C. Chen, Jong-Ching Wu, Simon C. Li, Chao Chen Yang, Te Ho Wu

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Abstract

Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of Si O2 (20 nm) Ta (5 nm) Cu (20 nm) Ta (5 nm) NiFe (2 nm) Cu (5 nm) MnIr (10 nm) CoFe (4 nm) Al-O (1.5 nm) CoFe (4 nm) NiFe (20 nm) Ta (50 nm) was measured by conducting atomic force microscopy to obtain I-V curves. Tunnel magnetoresistance was characterized from these nonlinear I-V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.

Original languageEnglish
Article number08R705
JournalJournal of Applied Physics
Volume99
Issue number8
DOIs
Publication statusPublished - 2006 May 25

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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