Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

Jian Huang Lin, Yow Jon Lin, Hsing Cheng Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.

Original languageEnglish
Pages (from-to)361-366
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume118
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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Polysilicon
Graphene
Diodes
Tuning
Irradiation
Optoelectronic devices
Electric properties
Fabrication

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation. / Lin, Jian Huang; Lin, Yow Jon; Chang, Hsing Cheng.

In: Applied Physics A: Materials Science and Processing, Vol. 118, No. 1, 01.01.2014, p. 361-366.

Research output: Contribution to journalArticle

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