Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

Jian Huang Lin; Yow Jon Lin; Hsing Cheng Chang

doi:10.1007/s00339-014-8742-3

Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

Jian Huang Lin, Yow Jon Lin, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.

Original language	English
Pages (from-to)	361-366
Number of pages	6
Journal	Applied Physics A: Materials Science and Processing
Volume	118
Issue number	1
DOIs	https://doi.org/10.1007/s00339-014-8742-3
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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10.1007/s00339-014-8742-3

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abstract = "The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.",

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AB - The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.

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