Abstract
The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 361-366 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 118 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation. / Lin, Jian Huang; Lin, Yow Jon; Chang, Hsing Cheng.
In: Applied Physics A: Materials Science and Processing, Vol. 118, No. 1, 01.01.2014, p. 361-366.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation
AU - Lin, Jian Huang
AU - Lin, Yow Jon
AU - Chang, Hsing Cheng
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.
AB - The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85027926832&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85027926832&partnerID=8YFLogxK
U2 - 10.1007/s00339-014-8742-3
DO - 10.1007/s00339-014-8742-3
M3 - Article
AN - SCOPUS:85027926832
VL - 118
SP - 361
EP - 366
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 1
ER -