Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification

Yow-Jon Lin, Hsing Cheng Chang, Day Shan Liu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoOx capping layer that serves to the electron–phonon coupling modification is reported. For OTFTs with a MoOx front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoOx layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron–phonon coupling modification that results from the contribution of long-lifetime electron trapping.

Original languageEnglish
Pages (from-to)1205-1210
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume118
Issue number4
DOIs
Publication statusPublished - 2014 Jan 1

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Carrier mobility
Hall effect
Thin film transistors
Charge transfer
Tuning
Electrons
Temperature
Carrier concentration
pentacene

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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abstract = "Tuning charge transport in the bottom-contact pentacene-based organic thin-film transistors (OTFTs) using a MoOx capping layer that serves to the electron–phonon coupling modification is reported. For OTFTs with a MoOx front gate, the enhanced field-effect carrier mobility is investigated. The time domain data confirm the electron-trapping model. To understand the origin of a mobility enhancement, an analysis of the temperature-dependent Hall-effect characteristics is presented. Similarly, the Hall-effect carrier mobility was dramatically increased by capping a MoOx layer on the pentacene front surface. However, the carrier concentration is not affected. The Hall-effect carrier mobility exhibits strong temperature dependence, indicating the dominance of tunneling (hopping) at low (high) temperatures. A mobility enhancement is considered to come from the electron–phonon coupling modification that results from the contribution of long-lifetime electron trapping.",
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Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification. / Lin, Yow-Jon; Chang, Hsing Cheng; Liu, Day Shan.

In: Applied Physics A: Materials Science and Processing, Vol. 118, No. 4, 01.01.2014, p. 1205-1210.

Research output: Contribution to journalArticle

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