Tunable light emissions from thermally evaporated In₂O₃ nanostructures grown at different growth temperatures

We report the synthesis of the In₂O₃ nanostructures grown at different growth temperatures by using the thermal evaporation method. The gold nanoparticles were used as the catalyst and were dispersed on the silicon wafer to facilitate the growth of In₂O₃ nanostructures. The nanostructures of the In₂O₃ were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The photoluminescence study reveals that In₂O₃ nanostructures could emit different luminescence peaks in the range of 400-600 nm with broad bands by adjusting different growth temperatures. The coverage of the wavelength tuning in the emission peaks of the In₂O₃ nanostructures could be beneficial for possible applications in white light illumination through manipulating the ratio of each wavelength component.