True dipole at the indium tin oxide/organic semiconductor interface

Yow Jon Lin, Jia Huang Hong, Yi Chun Lien, Bei Yuan Liu

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4 Citations (Scopus)


There has been long-standing interest in the development of organic optoelectronic devices. However, the authors find that the previously reported interface-dipole calculations seem to be inaccurate, owing to a persistent neglect of the induced band bending of indium tin oxide (ITO) by coating of organic semiconductors on ITO. In this study, the correlation between the induced band bending of ITO in the presence of organic semiconductors on ITO and the dipole at the interface was examined.

Original languageEnglish
Article number262110
JournalApplied Physics Letters
Issue number26
Publication statusPublished - 2006 Dec 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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