True dipole at the indium tin oxide/organic semiconductor interface

Yow-Jon Lin, Jia Huang Hong, Yi Chun Lien, Bei Yuan Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

There has been long-standing interest in the development of organic optoelectronic devices. However, the authors find that the previously reported interface-dipole calculations seem to be inaccurate, owing to a persistent neglect of the induced band bending of indium tin oxide (ITO) by coating of organic semiconductors on ITO. In this study, the correlation between the induced band bending of ITO in the presence of organic semiconductors on ITO and the dipole at the interface was examined.

Original languageEnglish
Article number262110
JournalApplied Physics Letters
Volume89
Issue number26
DOIs
Publication statusPublished - 2006 Dec 1

Fingerprint

organic semiconductors
ITO (semiconductors)
indium oxides
tin oxides
dipoles
optoelectronic devices
coatings

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Yow-Jon ; Hong, Jia Huang ; Lien, Yi Chun ; Liu, Bei Yuan. / True dipole at the indium tin oxide/organic semiconductor interface. In: Applied Physics Letters. 2006 ; Vol. 89, No. 26.
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True dipole at the indium tin oxide/organic semiconductor interface. / Lin, Yow-Jon; Hong, Jia Huang; Lien, Yi Chun; Liu, Bei Yuan.

In: Applied Physics Letters, Vol. 89, No. 26, 262110, 01.12.2006.

Research output: Contribution to journalArticle

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