Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on trenched a -plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3× 107 cm-2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a -plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 μm thick.