Abstract
The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on trenched a -plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3× 107 cm-2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a -plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 μm thick.
Original language | English |
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Article number | 251109 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2006 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)