Abstract
The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on trenched a -plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3× 107 cm-2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a -plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 μm thick.
| Original language | English |
|---|---|
| Article number | 251109 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density. / Wang, Te Chung; Lu, Tien Chang; Ko, Tsung Shine; Kuo, Hao Chung; Yu, Min; Wang, Sing Chung; Chuo, Chang Cheng; Lee, Zheng Hong; Chen, Hou Guang.
In: Applied Physics Letters, Vol. 89, No. 25, 251109, 01.12.2006.Research output: Contribution to journal › Article
TY - JOUR
T1 - Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density
AU - Wang, Te Chung
AU - Lu, Tien Chang
AU - Ko, Tsung Shine
AU - Kuo, Hao Chung
AU - Yu, Min
AU - Wang, Sing Chung
AU - Chuo, Chang Cheng
AU - Lee, Zheng Hong
AU - Chen, Hou Guang
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on trenched a -plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3× 107 cm-2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a -plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 μm thick.
AB - The crystal quality of a -plane GaN films was improved by using epitaxial lateral overgrowth on trenched a -plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth (TELOG). The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3× 107 cm-2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a -plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 μm thick.
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U2 - 10.1063/1.2405880
DO - 10.1063/1.2405880
M3 - Article
AN - SCOPUS:33845962798
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 251109
ER -