@inproceedings{15d570699f384bd0abbddc87dda1fe08,
title = "Transport properties of patterned magnetic tunnel junctions using lift-off method",
abstract = "We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.",
author = "Wu, {Kuo Ming} and Wu, {J. C.} and Lance Horng",
year = "2006",
month = dec,
day = "1",
doi = "10.1063/1.2355265",
language = "English",
isbn = "0735403473",
series = "AIP Conference Proceedings",
pages = "1486--1487",
booktitle = "LOW TEMPERATURE PHYSICS",
note = "LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 ; Conference date: 10-08-2006 Through 17-10-2006",
}