Transport properties of patterned magnetic tunnel junctions using lift-off method

Kuo Ming Wu; J. C. Wu; Lance Horng

doi:10.1063/1.2355265

Transport properties of patterned magnetic tunnel junctions using lift-off method

Kuo Ming Wu, J. C. Wu, Lance Horng

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co₅₀FE₅₀ (25)/Al + oxidation (1.2)/Ni₂₀Fe₈₀ (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm²) junction areas.

Original language	English
Title of host publication	LOW TEMPERATURE PHYSICS
Subtitle of host publication	24th International Conference on Low Temperature Physics - LT24
Pages	1486-1487
Number of pages	2
DOIs	https://doi.org/10.1063/1.2355265
Publication status	Published - 2006 Dec 1
Event	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States Duration: 2006 Aug 10 → 2006 Oct 17

Publication series

Name	AIP Conference Proceedings
Volume	850
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country	United States
City	Orlando, FL
Period	06-08-10 → 06-10-17

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1063/1.2355265

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title = "Transport properties of patterned magnetic tunnel junctions using lift-off method",

abstract = "We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.",

author = "Wu, {Kuo Ming} and Wu, {J. C.} and Lance Horng",

year = "2006",

month = dec,

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doi = "10.1063/1.2355265",

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note = "LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 ; Conference date: 10-08-2006 Through 17-10-2006",

}

Wu, KM, Wu, JC & Horng, L 2006, Transport properties of patterned magnetic tunnel junctions using lift-off method. in LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP Conference Proceedings, vol. 850, pp. 1486-1487, LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, Orlando, FL, United States, 06-08-10. https://doi.org/10.1063/1.2355265

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AU - Wu, J. C.

AU - Horng, Lance

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N2 - We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.

AB - We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.

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