Transport properties of patterned magnetic tunnel junctions using lift-off method

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1486-1487
Number of pages2
Volume850
DOIs
Publication statusPublished - 2006 Dec 1
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 2006 Aug 102006 Oct 17

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period06-08-1006-10-17

Fingerprint

tunnel junctions
transport properties
short circuits
magnetron sputtering
direct current
hysteresis
etching
magnetization
oxidation
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Wu, K. M., Wu, J-C., & Horng, L. (2006). Transport properties of patterned magnetic tunnel junctions using lift-off method. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (Vol. 850, pp. 1486-1487) https://doi.org/10.1063/1.2355265
Wu, Kuo Ming ; Wu, Jong-Ching ; Horng, Lance. / Transport properties of patterned magnetic tunnel junctions using lift-off method. LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. Vol. 850 2006. pp. 1486-1487
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Wu, KM, Wu, J-C & Horng, L 2006, Transport properties of patterned magnetic tunnel junctions using lift-off method. in LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. vol. 850, pp. 1486-1487, LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, Orlando, FL, United States, 06-08-10. https://doi.org/10.1063/1.2355265

Transport properties of patterned magnetic tunnel junctions using lift-off method. / Wu, Kuo Ming; Wu, Jong-Ching; Horng, Lance.

LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. Vol. 850 2006. p. 1486-1487.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wu KM, Wu J-C, Horng L. Transport properties of patterned magnetic tunnel junctions using lift-off method. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. Vol. 850. 2006. p. 1486-1487 https://doi.org/10.1063/1.2355265