Abstract
We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.
| Original language | English |
|---|---|
| Title of host publication | LOW TEMPERATURE PHYSICS |
| Subtitle of host publication | 24th International Conference on Low Temperature Physics - LT24 |
| Pages | 1486-1487 |
| Number of pages | 2 |
| Volume | 850 |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States Duration: 2006 Aug 10 → 2006 Oct 17 |
Other
| Other | LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 |
|---|---|
| Country | United States |
| City | Orlando, FL |
| Period | 06-08-10 → 06-10-17 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Transport properties of patterned magnetic tunnel junctions using lift-off method. / Wu, Kuo Ming; Wu, Jong-Ching; Horng, Lance.
LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. Vol. 850 2006. p. 1486-1487.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Transport properties of patterned magnetic tunnel junctions using lift-off method
AU - Wu, Kuo Ming
AU - Wu, Jong-Ching
AU - Horng, Lance
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.
AB - We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.
UR - http://www.scopus.com/inward/record.url?scp=33947502643&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33947502643&partnerID=8YFLogxK
U2 - 10.1063/1.2355265
DO - 10.1063/1.2355265
M3 - Conference contribution
SN - 0735403473
SN - 9780735403475
VL - 850
SP - 1486
EP - 1487
BT - LOW TEMPERATURE PHYSICS
ER -