Transport properties of patterned magnetic tunnel junctions using lift-off method

Kuo Ming Wu, J. C. Wu, Lance Horng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We develop a new process of fabricating MTJs which avoids the short circuit of the trilayers induced by the redeposit effect in etching process. The junction structures studied were prepared by UHV DC/RF magnetron sputtering. All MTJs have the same structure: Al (60)/Co50FE50 (25)/Al + oxidation (1.2)/Ni20Fe80 (3O)/A1 (60), with all thickness given in nanometers. The thickness of AlOx correspond to the effective barrier width determined by fitting I-V curve to Simmons Equation. The magnetization hysteresis (MH) loops are measured by a SQUID system at 298K. All MR measurements are taken at 180mV with 20 × 50 (μm2) junction areas.

Original languageEnglish
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages1486-1487
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: 2006 Aug 102006 Oct 17

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period06-08-1006-10-17

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Wu, K. M., Wu, J. C., & Horng, L. (2006). Transport properties of patterned magnetic tunnel junctions using lift-off method. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (pp. 1486-1487). (AIP Conference Proceedings; Vol. 850). https://doi.org/10.1063/1.2355265