Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O

Chi Ying Hsiao, Jing Hsung Yang, Jyh Rong Gong, Dong Yuan Lyu, Tai Yuan Lin, Cheng Tao Lu, Der Yuh Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1337-1338
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10-01-0310-01-08

Fingerprint

Atomic layer deposition
Zinc oxide
Indium
Oxide films
Zinc
Doping (additives)
Opacity
Light transmission
Absorption spectroscopy
Sapphire
Field emission
Light absorption
Scanning electron microscopy
Oxides
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Hsiao, C. Y., Yang, J. H., Gong, J. R., Lyu, D. Y., Lin, T. Y., Lu, C. T., & Lin, D. Y. (2010). Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1337-1338). [5424867] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424867
Hsiao, Chi Ying ; Yang, Jing Hsung ; Gong, Jyh Rong ; Lyu, Dong Yuan ; Lin, Tai Yuan ; Lu, Cheng Tao ; Lin, Der Yuh. / Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1337-1338 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).
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title = "Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O",
abstract = "Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90{\%} in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.",
author = "Hsiao, {Chi Ying} and Yang, {Jing Hsung} and Gong, {Jyh Rong} and Lyu, {Dong Yuan} and Lin, {Tai Yuan} and Lu, {Cheng Tao} and Lin, {Der Yuh}",
year = "2010",
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doi = "10.1109/INEC.2010.5424867",
language = "English",
isbn = "9781424435449",
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Hsiao, CY, Yang, JH, Gong, JR, Lyu, DY, Lin, TY, Lu, CT & Lin, DY 2010, Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424867, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1337-1338, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10-01-03. https://doi.org/10.1109/INEC.2010.5424867

Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. / Hsiao, Chi Ying; Yang, Jing Hsung; Gong, Jyh Rong; Lyu, Dong Yuan; Lin, Tai Yuan; Lu, Cheng Tao; Lin, Der Yuh.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1337-1338 5424867 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Lin, Tai Yuan

AU - Lu, Cheng Tao

AU - Lin, Der Yuh

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AB - Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.

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Hsiao CY, Yang JH, Gong JR, Lyu DY, Lin TY, Lu CT et al. Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1337-1338. 5424867. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424867