Abstract
Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 1337-1338 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
|---|
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10-01-03 → 10-01-08 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. / Hsiao, Chi Ying; Yang, Jing Hsung; Gong, Jyh Rong; Lyu, Dong Yuan; Lin, Tai Yuan; Lu, Cheng Tao; Lin, Der Yuh.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1337-1338 5424867 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O
AU - Hsiao, Chi Ying
AU - Yang, Jing Hsung
AU - Gong, Jyh Rong
AU - Lyu, Dong Yuan
AU - Lin, Tai Yuan
AU - Lu, Cheng Tao
AU - Lin, Der Yuh
PY - 2010/5/5
Y1 - 2010/5/5
N2 - Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.
AB - Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.
UR - http://www.scopus.com/inward/record.url?scp=77951655489&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951655489&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424867
DO - 10.1109/INEC.2010.5424867
M3 - Conference contribution
AN - SCOPUS:77951655489
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1337
EP - 1338
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -