Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O

Chi Ying Hsiao; Jing Hsung Yang; Jyh Rong Gong; Dong Yuan Lyu; Tai Yuan Lin; Cheng Tao Lu; Der Yuh Lin

doi:10.1109/INEC.2010.5424867

Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N₂O

Chi Ying Hsiao, Jing Hsung Yang, Jyh Rong Gong, Dong Yuan Lyu, Tai Yuan Lin, Cheng Tao Lu, Der Yuh Lin

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N₂O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10^-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1337-1338
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424867
Publication status	Published - 2010 May 5
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country	China
City	Hongkong
Period	10-01-03 → 10-01-08

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Hsiao, C. Y., Yang, J. H., Gong, J. R., Lyu, D. Y., Lin, T. Y., Lu, C. T., & Lin, D. Y. (2010). Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N₂O. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1337-1338). [5424867] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424867

Hsiao, Chi Ying ; Yang, Jing Hsung ; Gong, Jyh Rong ; Lyu, Dong Yuan ; Lin, Tai Yuan ; Lu, Cheng Tao ; Lin, Der Yuh. / Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N₂O. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1337-1338 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

@inproceedings{2af5f8d68b894d1bb6ba1d18759bfb7e,

title = "Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O",

abstract = "Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.",

author = "Hsiao, {Chi Ying} and Yang, {Jing Hsung} and Gong, {Jyh Rong} and Lyu, {Dong Yuan} and Lin, {Tai Yuan} and Lu, {Cheng Tao} and Lin, {Der Yuh}",

year = "2010",

month = may

day = "5",

doi = "10.1109/INEC.2010.5424867",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "1337--1338",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Hsiao, CY, Yang, JH, Gong, JR, Lyu, DY, Lin, TY, Lu, CT & Lin, DY 2010, Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N₂O. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424867, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 1337-1338, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10-01-03. https://doi.org/10.1109/INEC.2010.5424867

Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N₂O. / Hsiao, Chi Ying; Yang, Jing Hsung; Gong, Jyh Rong; Lyu, Dong Yuan; Lin, Tai Yuan; Lu, Cheng Tao; Lin, Der Yuh.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1337-1338 5424867 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O

AU - Hsiao, Chi Ying

AU - Yang, Jing Hsung

AU - Gong, Jyh Rong

AU - Lyu, Dong Yuan

AU - Lin, Tai Yuan

AU - Lu, Cheng Tao

AU - Lin, Der Yuh

PY - 2010/5/5

Y1 - 2010/5/5

N2 - Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.

AB - Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.

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DO - 10.1109/INEC.2010.5424867

M3 - Conference contribution

AN - SCOPUS:77951655489

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 1337

EP - 1338

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Hsiao CY, Yang JH, Gong JR, Lyu DY, Lin TY, Lu CT et al. Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N₂O. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1337-1338. 5424867. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424867

Access to Document

10.1109/INEC.2010.5424867