@inproceedings{2af5f8d68b894d1bb6ba1d18759bfb7e,
title = "Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O",
abstract = "Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.",
author = "Hsiao, {Chi Ying} and Yang, {Jing Hsung} and Gong, {Jyh Rong} and Lyu, {Dong Yuan} and Lin, {Tai Yuan} and Lu, {Cheng Tao} and Lin, {Der Yuh}",
year = "2010",
month = may,
day = "5",
doi = "10.1109/INEC.2010.5424867",
language = "English",
isbn = "9781424435449",
series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
pages = "1337--1338",
booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",
note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",
}