Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O

Chi Ying Hsiao, Jing Hsung Yang, Jyh Rong Gong, Dong Yuan Lyu, Tai Yuan Lin, Cheng Tao Lu, Der Yuh Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium (TMIn) and nitrous oxide (N2O) as precursors. The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission and absorption spectroscopy, field emission scanning electron microscopy, and Hall measurement. The IZO films with high In-doping were found to exhibit optical transmittances being higher than 90% in the visible spectra along with resistivities being 8.72x10-4 Ω-cm. Burstein-Moss shift effect was also observed in the high In-incorporated IZO films due to the high-doping background.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1337-1338
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10-01-0310-01-08

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Hsiao, C. Y., Yang, J. H., Gong, J. R., Lyu, D. Y., Lin, T. Y., Lu, C. T., & Lin, D. Y. (2010). Transparent conductive IZO films prepared by atomic layer deposition using DEZn/TMIn and N2O. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1337-1338). [5424867] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424867