TY - JOUR
T1 - Transmission electron beam drilling for nanoscale fabrication
AU - Lin, Tsan Chu
AU - Su, Rui Zhi
AU - Lai, Yu Cheng
AU - Wang, Dau Chung
AU - Wu, Cen-Shawn
PY - 2010/6/1
Y1 - 2010/6/1
N2 - We demonstrated that a high-resolution focused electron beam can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. This top-down focused electron beam drilling method works by the controlled ablation of materias to produce nanoscale devices with near-atomic the precision. In addition, we have fabricated a single-electron transistor (SET) on free-standing transparent Si3N4 membranes, which permits enables us to explore quantum tunneling effects in narrow-constriction structures. The produced SET exhibited distinct Coulomb-blockade current-voltage characteristics and gate-modulated current at 4.2 K. Its high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and quantum devices.
AB - We demonstrated that a high-resolution focused electron beam can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. This top-down focused electron beam drilling method works by the controlled ablation of materias to produce nanoscale devices with near-atomic the precision. In addition, we have fabricated a single-electron transistor (SET) on free-standing transparent Si3N4 membranes, which permits enables us to explore quantum tunneling effects in narrow-constriction structures. The produced SET exhibited distinct Coulomb-blockade current-voltage characteristics and gate-modulated current at 4.2 K. Its high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and quantum devices.
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U2 - 10.1143/JJAP.49.06GH16
DO - 10.1143/JJAP.49.06GH16
M3 - Article
AN - SCOPUS:77955321152
VL - 49
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 6 PART 2
ER -