We demonstrated that a high-resolution focused electron beam can be used to fabricate metal nanostructures and devices on insulating membranes by nanosculpting metal films. This top-down focused electron beam drilling method works by the controlled ablation of materias to produce nanoscale devices with near-atomic the precision. In addition, we have fabricated a single-electron transistor (SET) on free-standing transparent Si3N4 membranes, which permits enables us to explore quantum tunneling effects in narrow-constriction structures. The produced SET exhibited distinct Coulomb-blockade current-voltage characteristics and gate-modulated current at 4.2 K. Its high resolution, geometrical flexibility, and yield make this fabrication method attractive for many applications including nanoelectronics and quantum devices.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)