TiWN schottky contacts to n-Ga 0.51 In 0.49 P

Kun Chuan Lin, Edward Y. Chang, Sheng Ping Wang, Yeong-Lin Lai, Chun Yen Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The study of the applicability of TiW nitrides (TiWN x ) as the Schottky contact metals to the n-type Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer is successfully grown on the GaAs substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) to form a lattice-matched heterostructure. The RF-magnetron sputtering system is utilized for nitride deposition. Thermal stability of the nitride films is studied with the aid of a rapid thermal annealing system. The material properties are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). With sufficient nitrogen content, the Schottky contacts showed excellent electrical and physical characteristics even after a high-temperature annealing. The barrier heights, ranging from 0.81 to 1.05 eV, depend on the content of nitrogen and the rapid thermal annealing (RTA) annealing condition. The XRD and AES results indicate no interaction occurring at the TiWN x /GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the Schottky contact are attributed to the high band-gap nature of the GaInP and the incorporation of nitrogen into the TiW films.� 1994, (publisher). All rights reserved.

Original languageEnglish
Pages (from-to)4546-4549
Number of pages4
JournalJapanese Journal of Applied Physics
Volume33
Issue number8 R
DOIs
Publication statusPublished - 1994 Jan 1

Fingerprint

Nitrides
Rapid thermal annealing
Auger electron spectroscopy
Nitrogen
nitrides
electric contacts
annealing
nitrogen
Annealing
Auger spectroscopy
electron spectroscopy
X ray diffraction
Low pressure chemical vapor deposition
Epitaxial layers
Metallorganic chemical vapor deposition
Magnetron sputtering
Heterojunctions
Materials properties
Energy gap
Thermodynamic stability

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lin, Kun Chuan ; Chang, Edward Y. ; Wang, Sheng Ping ; Lai, Yeong-Lin ; Chang, Chun Yen. / TiWN schottky contacts to n-Ga 0.51 In 0.49 P In: Japanese Journal of Applied Physics. 1994 ; Vol. 33, No. 8 R. pp. 4546-4549.
@article{12fbb8e86bd748a8a1f351b4cdbc504c,
title = "TiWN schottky contacts to n-Ga 0.51 In 0.49 P",
abstract = "The study of the applicability of TiW nitrides (TiWN x ) as the Schottky contact metals to the n-type Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer is successfully grown on the GaAs substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) to form a lattice-matched heterostructure. The RF-magnetron sputtering system is utilized for nitride deposition. Thermal stability of the nitride films is studied with the aid of a rapid thermal annealing system. The material properties are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). With sufficient nitrogen content, the Schottky contacts showed excellent electrical and physical characteristics even after a high-temperature annealing. The barrier heights, ranging from 0.81 to 1.05 eV, depend on the content of nitrogen and the rapid thermal annealing (RTA) annealing condition. The XRD and AES results indicate no interaction occurring at the TiWN x /GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the Schottky contact are attributed to the high band-gap nature of the GaInP and the incorporation of nitrogen into the TiW films.� 1994, (publisher). All rights reserved.",
author = "Lin, {Kun Chuan} and Chang, {Edward Y.} and Wang, {Sheng Ping} and Yeong-Lin Lai and Chang, {Chun Yen}",
year = "1994",
month = "1",
day = "1",
doi = "10.1143/JJAP.33.4546",
language = "English",
volume = "33",
pages = "4546--4549",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 R",

}

Lin, KC, Chang, EY, Wang, SP, Lai, Y-L & Chang, CY 1994, ' TiWN schottky contacts to n-Ga 0.51 In 0.49 P ', Japanese Journal of Applied Physics, vol. 33, no. 8 R, pp. 4546-4549. https://doi.org/10.1143/JJAP.33.4546

TiWN schottky contacts to n-Ga 0.51 In 0.49 P . / Lin, Kun Chuan; Chang, Edward Y.; Wang, Sheng Ping; Lai, Yeong-Lin; Chang, Chun Yen.

In: Japanese Journal of Applied Physics, Vol. 33, No. 8 R, 01.01.1994, p. 4546-4549.

Research output: Contribution to journalArticle

TY - JOUR

T1 - TiWN schottky contacts to n-Ga 0.51 In 0.49 P

AU - Lin, Kun Chuan

AU - Chang, Edward Y.

AU - Wang, Sheng Ping

AU - Lai, Yeong-Lin

AU - Chang, Chun Yen

PY - 1994/1/1

Y1 - 1994/1/1

N2 - The study of the applicability of TiW nitrides (TiWN x ) as the Schottky contact metals to the n-type Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer is successfully grown on the GaAs substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) to form a lattice-matched heterostructure. The RF-magnetron sputtering system is utilized for nitride deposition. Thermal stability of the nitride films is studied with the aid of a rapid thermal annealing system. The material properties are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). With sufficient nitrogen content, the Schottky contacts showed excellent electrical and physical characteristics even after a high-temperature annealing. The barrier heights, ranging from 0.81 to 1.05 eV, depend on the content of nitrogen and the rapid thermal annealing (RTA) annealing condition. The XRD and AES results indicate no interaction occurring at the TiWN x /GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the Schottky contact are attributed to the high band-gap nature of the GaInP and the incorporation of nitrogen into the TiW films.� 1994, (publisher). All rights reserved.

AB - The study of the applicability of TiW nitrides (TiWN x ) as the Schottky contact metals to the n-type Ga 0.51 In 0.49 P has been made. The Ga 0.51 In 0.49 P epitaxial layer is successfully grown on the GaAs substrate by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) to form a lattice-matched heterostructure. The RF-magnetron sputtering system is utilized for nitride deposition. Thermal stability of the nitride films is studied with the aid of a rapid thermal annealing system. The material properties are characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). With sufficient nitrogen content, the Schottky contacts showed excellent electrical and physical characteristics even after a high-temperature annealing. The barrier heights, ranging from 0.81 to 1.05 eV, depend on the content of nitrogen and the rapid thermal annealing (RTA) annealing condition. The XRD and AES results indicate no interaction occurring at the TiWN x /GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the Schottky contact are attributed to the high band-gap nature of the GaInP and the incorporation of nitrogen into the TiW films.� 1994, (publisher). All rights reserved.

UR - http://www.scopus.com/inward/record.url?scp=0028481143&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028481143&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.4546

DO - 10.1143/JJAP.33.4546

M3 - Article

AN - SCOPUS:0028481143

VL - 33

SP - 4546

EP - 4549

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 R

ER -