Abstract
In this study, we removed type II Sn-Se secondary phases from Cu2ZnSnSe4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8% to 5.6%.
| Original language | English |
|---|---|
| Pages (from-to) | 6725-6729 |
| Number of pages | 5 |
| Journal | ACS Applied Energy Materials |
| Volume | 1 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2018 Dec 24 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering (miscellaneous)
- Energy Engineering and Power Technology
- Electrochemistry
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
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Tin-Selenium Secondary Phase Etching of Cu2ZnSnSe4 : A Selective Removal Route to Improve Solar Cell Efficiency. / Lin, Yi Cheng; Su, Zih Yi.
In: ACS Applied Energy Materials, Vol. 1, No. 12, 24.12.2018, p. 6725-6729.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tin-Selenium Secondary Phase Etching of Cu2ZnSnSe4
T2 - A Selective Removal Route to Improve Solar Cell Efficiency
AU - Lin, Yi Cheng
AU - Su, Zih Yi
PY - 2018/12/24
Y1 - 2018/12/24
N2 - In this study, we removed type II Sn-Se secondary phases from Cu2ZnSnSe4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8% to 5.6%.
AB - In this study, we removed type II Sn-Se secondary phases from Cu2ZnSnSe4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8% to 5.6%.
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U2 - 10.1021/acsaem.8b01598
DO - 10.1021/acsaem.8b01598
M3 - Article
AN - SCOPUS:85064730738
VL - 1
SP - 6725
EP - 6729
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
SN - 2574-0962
IS - 12
ER -