Tin-Selenium Secondary Phase Etching of Cu 2 ZnSnSe 4

A Selective Removal Route to Improve Solar Cell Efficiency

Research output: Contribution to journalArticle

Abstract

In this study, we removed type II Sn-Se secondary phases from Cu 2 ZnSnSe 4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO 3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8% to 5.6%.

Original languageEnglish
Pages (from-to)6725-6729
Number of pages5
JournalACS Applied Energy Materials
Volume1
Issue number12
DOIs
Publication statusPublished - 2018 Dec 24

Fingerprint

Tin
Selenium
Flow of gases
Etching
Solar cells
Flow rate
Experiments

All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Chemical Engineering (miscellaneous)
  • Electrochemistry
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

@article{eece37db05d94ecb9c8355b3a7aa7cde,
title = "Tin-Selenium Secondary Phase Etching of Cu 2 ZnSnSe 4: A Selective Removal Route to Improve Solar Cell Efficiency",
abstract = "In this study, we removed type II Sn-Se secondary phases from Cu 2 ZnSnSe 4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO 3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8{\%} to 5.6{\%}.",
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Tin-Selenium Secondary Phase Etching of Cu 2 ZnSnSe 4 : A Selective Removal Route to Improve Solar Cell Efficiency. / Lin, Yi-Cheng or Y. C.; Su, Zih Yi.

In: ACS Applied Energy Materials, Vol. 1, No. 12, 24.12.2018, p. 6725-6729.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tin-Selenium Secondary Phase Etching of Cu 2 ZnSnSe 4

T2 - A Selective Removal Route to Improve Solar Cell Efficiency

AU - Lin, Yi-Cheng or Y. C.

AU - Su, Zih Yi

PY - 2018/12/24

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AB - In this study, we removed type II Sn-Se secondary phases from Cu 2 ZnSnSe 4 (CZTSe) absorber surface via selective chemical etching and then examined the influence of this etching on the performances of solar cell devices. Experiment results indicate that the morphology of Sn-Se secondary phases are determined by the Ar gas flow rate (Sn/Se ratio) of the selenization process in the CZTSe absorber layer. Round or semicircular structures (type II) of Sn-Se secondary phases formed in films with a higher Ar gas flow rate (Sn/Se ratio) selenization process. We found that HNO 3 with 3 HCl could remove type II Sn-Se secondary phases, thereby improving average device efficiency from 3.8% to 5.6%.

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