Three-dimension quantum confinement in InGaN/GaN nano-rods

Horng Shyang Chen, Dong Ming Yeh, G. Yen Chen, Yen Cheng Lu, C. C. Yang, Cen-Shawn Wu, C. D. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages141-142
Number of pages2
DOIs
Publication statusPublished - 2005 Dec 1

Publication series

NameIQEC, International Quantum Electronics Conference Proceedings
Volume2005

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chen, H. S., Yeh, D. M., Chen, G. Y., Lu, Y. C., Yang, C. C., Wu, C-S., & Chen, C. D. (2005). Three-dimension quantum confinement in InGaN/GaN nano-rods. In International Quantum Electronics Conference 2005 (pp. 141-142). [1560852] (IQEC, International Quantum Electronics Conference Proceedings; Vol. 2005). https://doi.org/10.1109/IQEC.2005.1560852