Three-dimension quantum confinement in InGaN/GaN nano-rods

Horng Shyang Chen, Dong Ming Yeh, G. Yen Chen, Yen Cheng Lu, C. C. Yang, Cen-Shawn Wu, C. D. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages141-142
Number of pages2
Volume2005
DOIs
Publication statusPublished - 2005 Dec 1

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rods
lithography
etching
quantum wells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chen, H. S., Yeh, D. M., Chen, G. Y., Lu, Y. C., Yang, C. C., Wu, C-S., & Chen, C. D. (2005). Three-dimension quantum confinement in InGaN/GaN nano-rods. In International Quantum Electronics Conference 2005 (Vol. 2005, pp. 141-142). [1560852] https://doi.org/10.1109/IQEC.2005.1560852
Chen, Horng Shyang ; Yeh, Dong Ming ; Chen, G. Yen ; Lu, Yen Cheng ; Yang, C. C. ; Wu, Cen-Shawn ; Chen, C. D. / Three-dimension quantum confinement in InGaN/GaN nano-rods. International Quantum Electronics Conference 2005. Vol. 2005 2005. pp. 141-142
@inproceedings{57a491af98ff4914afe60fc0fa25c326,
title = "Three-dimension quantum confinement in InGaN/GaN nano-rods",
abstract = "Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.",
author = "Chen, {Horng Shyang} and Yeh, {Dong Ming} and Chen, {G. Yen} and Lu, {Yen Cheng} and Yang, {C. C.} and Cen-Shawn Wu and Chen, {C. D.}",
year = "2005",
month = "12",
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doi = "10.1109/IQEC.2005.1560852",
language = "English",
isbn = "078039240X",
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booktitle = "International Quantum Electronics Conference 2005",

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Chen, HS, Yeh, DM, Chen, GY, Lu, YC, Yang, CC, Wu, C-S & Chen, CD 2005, Three-dimension quantum confinement in InGaN/GaN nano-rods. in International Quantum Electronics Conference 2005. vol. 2005, 1560852, pp. 141-142. https://doi.org/10.1109/IQEC.2005.1560852

Three-dimension quantum confinement in InGaN/GaN nano-rods. / Chen, Horng Shyang; Yeh, Dong Ming; Chen, G. Yen; Lu, Yen Cheng; Yang, C. C.; Wu, Cen-Shawn; Chen, C. D.

International Quantum Electronics Conference 2005. Vol. 2005 2005. p. 141-142 1560852.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Three-dimension quantum confinement in InGaN/GaN nano-rods

AU - Chen, Horng Shyang

AU - Yeh, Dong Ming

AU - Chen, G. Yen

AU - Lu, Yen Cheng

AU - Yang, C. C.

AU - Wu, Cen-Shawn

AU - Chen, C. D.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.

AB - Nano-rods of a few tens nm in size on InGaN/GaN quantum well structures are fabricated with e-beam lithography and dry etching. Theoretical calculations show significant quantum effects when the rod size is < 30 nm.

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BT - International Quantum Electronics Conference 2005

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Chen HS, Yeh DM, Chen GY, Lu YC, Yang CC, Wu C-S et al. Three-dimension quantum confinement in InGaN/GaN nano-rods. In International Quantum Electronics Conference 2005. Vol. 2005. 2005. p. 141-142. 1560852 https://doi.org/10.1109/IQEC.2005.1560852