Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector

C. Y. Kung, S. L. Young, M. C. Kao, H. Z. Chen, J. H. Lin, H. H. Lin, Lance Horng, Y. T. Shih

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113 nm, respectively, while increasing the sputtered ZnO seed layer thickness from 20 nm to 50 nm. The optical properties were influenced by the presence of oxygen vacancies induced by Li doping in the Zn0.9Li0.1O nanorods. Besides, p-type ZnO-based semiconductor nanorods were obtained by the doping of Li into ZnO. Finally, the UV photodetectors with (p-Zn0.9Li 0.1O nanorods)/(n-Si subatrate) structure were also achieved. The I-V characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. The UV illumination/dark current ratio of the photodetectors with different seeded layer, 20nm and 50nm, were also measured as 201% and 364%, respectively.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages417-420
Number of pages4
DOIs
Publication statusPublished - 2013 Mar 13
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2013 Jan 22013 Jan 4

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Other

Other2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
CountrySingapore
CitySingapore
Period13-01-0213-01-04

Fingerprint

Nanorods
Electrical Properties
Photodetector
Photodetectors
Seed
Electric properties
Doping (additives)
Dark Current
Dark currents
Vacancy
Oxygen vacancies
X-ray Diffraction
Hexagon
Optical Properties
Diffraction patterns
Zinc Oxide
Well-defined
Diffraction
Oxygen
Illumination

All Science Journal Classification (ASJC) codes

  • Software
  • Modelling and Simulation
  • Computer Science Applications

Cite this

Kung, C. Y., Young, S. L., Kao, M. C., Chen, H. Z., Lin, J. H., Lin, H. H., ... Shih, Y. T. (2013). Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (pp. 417-420). [6466065] (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6466065
Kung, C. Y. ; Young, S. L. ; Kao, M. C. ; Chen, H. Z. ; Lin, J. H. ; Lin, H. H. ; Horng, Lance ; Shih, Y. T. / Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector. Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. pp. 417-420 (Proceedings - Winter Simulation Conference).
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title = "Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector",
abstract = "Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113 nm, respectively, while increasing the sputtered ZnO seed layer thickness from 20 nm to 50 nm. The optical properties were influenced by the presence of oxygen vacancies induced by Li doping in the Zn0.9Li0.1O nanorods. Besides, p-type ZnO-based semiconductor nanorods were obtained by the doping of Li into ZnO. Finally, the UV photodetectors with (p-Zn0.9Li 0.1O nanorods)/(n-Si subatrate) structure were also achieved. The I-V characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. The UV illumination/dark current ratio of the photodetectors with different seeded layer, 20nm and 50nm, were also measured as 201{\%} and 364{\%}, respectively.",
author = "Kung, {C. Y.} and Young, {S. L.} and Kao, {M. C.} and Chen, {H. Z.} and Lin, {J. H.} and Lin, {H. H.} and Lance Horng and Shih, {Y. T.}",
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Kung, CY, Young, SL, Kao, MC, Chen, HZ, Lin, JH, Lin, HH, Horng, L & Shih, YT 2013, Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6466065, Proceedings - Winter Simulation Conference, pp. 417-420, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 13-01-02. https://doi.org/10.1109/INEC.2013.6466065

Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector. / Kung, C. Y.; Young, S. L.; Kao, M. C.; Chen, H. Z.; Lin, J. H.; Lin, H. H.; Horng, Lance; Shih, Y. T.

Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 417-420 6466065 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector

AU - Kung, C. Y.

AU - Young, S. L.

AU - Kao, M. C.

AU - Chen, H. Z.

AU - Lin, J. H.

AU - Lin, H. H.

AU - Horng, Lance

AU - Shih, Y. T.

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N2 - Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113 nm, respectively, while increasing the sputtered ZnO seed layer thickness from 20 nm to 50 nm. The optical properties were influenced by the presence of oxygen vacancies induced by Li doping in the Zn0.9Li0.1O nanorods. Besides, p-type ZnO-based semiconductor nanorods were obtained by the doping of Li into ZnO. Finally, the UV photodetectors with (p-Zn0.9Li 0.1O nanorods)/(n-Si subatrate) structure were also achieved. The I-V characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. The UV illumination/dark current ratio of the photodetectors with different seeded layer, 20nm and 50nm, were also measured as 201% and 364%, respectively.

AB - Well-defined Zn0.9Li0.1O nanorods were hydrothermally synthesized at the low temperature of 90°C on the sputtered ZnO seed layer in different thickness, 20 nm and 50 nm. The x-ray diffraction patterns of both samples with a single diffraction peak (002) showed the same wurtzite hexagonal structure. The length and diameter of the nanorods were both increased from 1.12 μm to 1.47 μm and 95 nm to 113 nm, respectively, while increasing the sputtered ZnO seed layer thickness from 20 nm to 50 nm. The optical properties were influenced by the presence of oxygen vacancies induced by Li doping in the Zn0.9Li0.1O nanorods. Besides, p-type ZnO-based semiconductor nanorods were obtained by the doping of Li into ZnO. Finally, the UV photodetectors with (p-Zn0.9Li 0.1O nanorods)/(n-Si subatrate) structure were also achieved. The I-V characteristics of the UV photodetector with p-ZnO:Li nanorod/n-Si structure were also measured. The UV illumination/dark current ratio of the photodetectors with different seeded layer, 20nm and 50nm, were also measured as 201% and 364%, respectively.

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Kung CY, Young SL, Kao MC, Chen HZ, Lin JH, Lin HH et al. Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 417-420. 6466065. (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6466065