Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors

Yu Wu Wang, Horng Long Cheng

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the current-voltage characteristics and threshold voltage behaviors in polycrystalline pentacene-based organic thin-film transistors (OTFTs) with gold top-contact electrodes for different thickness of the pentacene films. The study uses a number of techniques to measure threshold voltage including: square-root method, constant-current method, maximum transconductance method and capacitance-voltage measurements. The results of our experiments suggest that the space-charge and trapping effects of the pentacene bulk film plays an important role in current-voltage characteristics. In the presence of trapping centers within the polycrystalline pentacene film, we have provided an analytical model explaining the effect of bulk traps on the thickness-dependent threshold voltage. Square-law of threshold voltage versus pentacene thickness in OTFTs was derived during our study providing consistent results with experimental data. Furthermore, using the square-law, we estimated trap density of about 1017 cm-3 in experimental pentacene films. The orders of magnitude in trap density of polycrystalline pentacene films are similar to the values found in other literature source.

Original languageEnglish
Pages (from-to)1107-1111
Number of pages5
JournalSolid-State Electronics
Volume53
Issue number10
DOIs
Publication statusPublished - 2009 Oct 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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