Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors

Yu Wu Wang, Horng Long Cheng

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the current-voltage characteristics and threshold voltage behaviors in polycrystalline pentacene-based organic thin-film transistors (OTFTs) with gold top-contact electrodes for different thickness of the pentacene films. The study uses a number of techniques to measure threshold voltage including: square-root method, constant-current method, maximum transconductance method and capacitance-voltage measurements. The results of our experiments suggest that the space-charge and trapping effects of the pentacene bulk film plays an important role in current-voltage characteristics. In the presence of trapping centers within the polycrystalline pentacene film, we have provided an analytical model explaining the effect of bulk traps on the thickness-dependent threshold voltage. Square-law of threshold voltage versus pentacene thickness in OTFTs was derived during our study providing consistent results with experimental data. Furthermore, using the square-law, we estimated trap density of about 1017 cm-3 in experimental pentacene films. The orders of magnitude in trap density of polycrystalline pentacene films are similar to the values found in other literature source.

Original languageEnglish
Pages (from-to)1107-1111
Number of pages5
JournalSolid-State Electronics
Volume53
Issue number10
DOIs
Publication statusPublished - 2009 Oct 1

Fingerprint

Thin film transistors
Threshold voltage
threshold voltage
transistors
thin films
traps
Current voltage characteristics
electric potential
trapping
Capacitance measurement
Voltage measurement
Transconductance
transconductance
Electric space charge
electrical measurement
space charge
Analytical models
Gold
capacitance
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "We have studied the current-voltage characteristics and threshold voltage behaviors in polycrystalline pentacene-based organic thin-film transistors (OTFTs) with gold top-contact electrodes for different thickness of the pentacene films. The study uses a number of techniques to measure threshold voltage including: square-root method, constant-current method, maximum transconductance method and capacitance-voltage measurements. The results of our experiments suggest that the space-charge and trapping effects of the pentacene bulk film plays an important role in current-voltage characteristics. In the presence of trapping centers within the polycrystalline pentacene film, we have provided an analytical model explaining the effect of bulk traps on the thickness-dependent threshold voltage. Square-law of threshold voltage versus pentacene thickness in OTFTs was derived during our study providing consistent results with experimental data. Furthermore, using the square-law, we estimated trap density of about 1017 cm-3 in experimental pentacene films. The orders of magnitude in trap density of polycrystalline pentacene films are similar to the values found in other literature source.",
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Thickness-dependent threshold voltage in polycrystalline pentacene-based thin-film transistors. / Wang, Yu Wu; Cheng, Horng Long.

In: Solid-State Electronics, Vol. 53, No. 10, 01.10.2009, p. 1107-1111.

Research output: Contribution to journalArticle

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