Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ

Chia-Jyi Liu, Ankam Bhaskar, J. J. Yuan, Zong Ren Yang, Shih Show Chen, Huang Chin Chen, Fan Wei Liao, Yu Ting Lin, Ping Hung Yeh, Chun Yen Lai, Ching Lin Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report electrical resistivity, thermopower and Ca K-, Mn L2,3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1-xSixO3 with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3 exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52% compared to pristine CaMnO3 .

Original languageEnglish
Pages (from-to)4048-4053
Number of pages6
JournalCeramics International
Volume42
Issue number3
DOIs
Publication statusPublished - 2016 Feb 15

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Thermoelectric power
X rays
Transport properties
Charge transfer
Substitution reactions
Doping (additives)
Electrons
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Liu, Chia-Jyi ; Bhaskar, Ankam ; Yuan, J. J. ; Yang, Zong Ren ; Chen, Shih Show ; Chen, Huang Chin ; Liao, Fan Wei ; Lin, Yu Ting ; Yeh, Ping Hung ; Lai, Chun Yen ; Chang, Ching Lin. / Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ In: Ceramics International. 2016 ; Vol. 42, No. 3. pp. 4048-4053.
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title = "Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ",
abstract = "We report electrical resistivity, thermopower and Ca K-, Mn L2,3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1-xSixO3 -δ with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3 -δ exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52{\%} compared to pristine CaMnO3 -δ.",
author = "Chia-Jyi Liu and Ankam Bhaskar and Yuan, {J. J.} and Yang, {Zong Ren} and Chen, {Shih Show} and Chen, {Huang Chin} and Liao, {Fan Wei} and Lin, {Yu Ting} and Yeh, {Ping Hung} and Lai, {Chun Yen} and Chang, {Ching Lin}",
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Liu, C-J, Bhaskar, A, Yuan, JJ, Yang, ZR, Chen, SS, Chen, HC, Liao, FW, Lin, YT, Yeh, PH, Lai, CY & Chang, CL 2016, 'Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ ', Ceramics International, vol. 42, no. 3, pp. 4048-4053. https://doi.org/10.1016/j.ceramint.2015.11.076

Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ . / Liu, Chia-Jyi; Bhaskar, Ankam; Yuan, J. J.; Yang, Zong Ren; Chen, Shih Show; Chen, Huang Chin; Liao, Fan Wei; Lin, Yu Ting; Yeh, Ping Hung; Lai, Chun Yen; Chang, Ching Lin.

In: Ceramics International, Vol. 42, No. 3, 15.02.2016, p. 4048-4053.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ

AU - Liu, Chia-Jyi

AU - Bhaskar, Ankam

AU - Yuan, J. J.

AU - Yang, Zong Ren

AU - Chen, Shih Show

AU - Chen, Huang Chin

AU - Liao, Fan Wei

AU - Lin, Yu Ting

AU - Yeh, Ping Hung

AU - Lai, Chun Yen

AU - Chang, Ching Lin

PY - 2016/2/15

Y1 - 2016/2/15

N2 - We report electrical resistivity, thermopower and Ca K-, Mn L2,3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1-xSixO3 -δ with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3 -δ exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52% compared to pristine CaMnO3 -δ.

AB - We report electrical resistivity, thermopower and Ca K-, Mn L2,3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1-xSixO3 -δ with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3 -δ exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52% compared to pristine CaMnO3 -δ.

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