Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3-δ

Chia Jyi Liu, Ankam Bhaskar, J. J. Yuan, Zong Ren Yang, Shih Show Chen, Huang Chin Chen, Fan Wei Liao, Yu Ting Lin, Ping Hung Yeh, Chun Yen Lai, Ching Lin Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We report electrical resistivity, thermopower and Ca K-, Mn L2,3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1-xSixO3 with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3 exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52% compared to pristine CaMnO3.

Original languageEnglish
Pages (from-to)4048-4053
Number of pages6
JournalCeramics International
Issue number3
Publication statusPublished - 2016 Feb 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO<sub>3-δ</sub>'. Together they form a unique fingerprint.

Cite this