Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

Dyi Cheng Chen; Ming Fei Chen; Ming Ren Chen

doi:10.1155/2014/723136

Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser

Dyi Cheng Chen, Ming Fei Chen, Ming Ren Chen

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

This study used ANSYS simulation software for analyzing an ultraviolet (UV) (355 nm) laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to S Olayer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, and electrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 s, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.

Original language	English
Article number	723136
Journal	Advances in Mechanical Engineering
Volume	2014
DOIs	https://doi.org/10.1155/2014/723136
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Mechanical Engineering

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10.1155/2014/723136

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Chen, D. C., Chen, M. F., & Chen, M. R. (2014). Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser. Advances in Mechanical Engineering, 2014, [723136]. https://doi.org/10.1155/2014/723136

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abstract = "This study used ANSYS simulation software for analyzing an ultraviolet (UV) (355 nm) laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to S Olayer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, and electrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 s, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.",

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