Abstract
The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.
| Original language | English |
|---|---|
| Pages (from-to) | 705-708 |
| Number of pages | 4 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 97 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes. / Yen, S. H.; Tsai, M. C.; Tsai, M. L.; Shen, Y. J.; Hsu, T. C.; Kuo, Yen-Kuang.
In: Applied Physics A: Materials Science and Processing, Vol. 97, No. 3, 01.11.2009, p. 705-708.Research output: Contribution to journal › Article
TY - JOUR
T1 - Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes
AU - Yen, S. H.
AU - Tsai, M. C.
AU - Tsai, M. L.
AU - Shen, Y. J.
AU - Hsu, T. C.
AU - Kuo, Yen-Kuang
PY - 2009/11/1
Y1 - 2009/11/1
N2 - The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.
AB - The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.
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U2 - 10.1007/s00339-009-5298-8
DO - 10.1007/s00339-009-5298-8
M3 - Article
AN - SCOPUS:70450237797
VL - 97
SP - 705
EP - 708
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 3
ER -