Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes

S. H. Yen; M. C. Tsai; M. L. Tsai; Y. J. Shen; T. C. Hsu; Y. K. Kuo

doi:10.1007/s00339-009-5298-8

Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes

S. H. Yen, M. C. Tsai, M. L. Tsai, Y. J. Shen, T. C. Hsu, Y. K. Kuo

Department of Physics

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.

Original language	English
Pages (from-to)	705-708
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	97
Issue number	3
DOIs	https://doi.org/10.1007/s00339-009-5298-8
Publication status	Published - 2009 Nov 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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Yen, S. H., Tsai, M. C., Tsai, M. L., Shen, Y. J., Hsu, T. C., & Kuo, Y. K. (2009). Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes. Applied Physics A: Materials Science and Processing, 97(3), 705-708. https://doi.org/10.1007/s00339-009-5298-8

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abstract = "The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.",

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AU - Shen, Y. J.

AU - Hsu, T. C.

AU - Kuo, Y. K.

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N2 - The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.

AB - The Auger recombination is recently proposed as one of the possible origins for the deteriorated internal quantum efficiency of InGaN light-emitting diodes. The Auger recombination behavior is quite different under widely varied Auger coefficients. The effect of Auger coefficient on the efficiency and output power is investigated numerically. The simulation results indicate that the Auger recombination with large Auger coefficient greatly decreases the efficiency in the whole current range under study. It is found that the electron current leakage and nonuniform hole distribution are the possible mechanisms responsible for the efficiency droop at high injection current.

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