The use of Ga16Sb84 alloy for electronic phase-change memory

Chih Chung Chang; Chien Tu Chao; Jong-Ching Wu; Tri Rung Yew; Ming Jinn Tsai; Tsung Shune Chin

doi:10.1016/j.scriptamat.2010.12.046

The use of Ga₁₆Sb₈₄ alloy for electronic phase-change memory

Chih Chung Chang, Chien Tu Chao, Jong-Ching Wu, Tri Rung Yew, Ming Jinn Tsai, Tsung Shune Chin

Department of Physics

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga₁₆Sb₈₄ film to meet this purpose. Amorphous Ga₁₆Sb₈₄ film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga₁₆Sb₈₄ memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >10⁵ cycles.

Original language	English
Pages (from-to)	801-804
Number of pages	4
Journal	Scripta Materialia
Volume	64
Issue number	9
DOIs	https://doi.org/10.1016/j.scriptamat.2010.12.046
Publication status	Published - 2011 May 1

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Cite this

Chang, C. C., Chao, C. T., Wu, J-C., Yew, T. R., Tsai, M. J., & Chin, T. S. (2011). The use of Ga₁₆Sb₈₄ alloy for electronic phase-change memory. Scripta Materialia, 64(9), 801-804. https://doi.org/10.1016/j.scriptamat.2010.12.046

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10.1016/j.scriptamat.2010.12.046