Abstract
The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >105 cycles.
| Original language | English |
|---|---|
| Pages (from-to) | 801-804 |
| Number of pages | 4 |
| Journal | Scripta Materialia |
| Volume | 64 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2011 May 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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The use of Ga16Sb84 alloy for electronic phase-change memory. / Chang, Chih Chung; Chao, Chien Tu; Wu, Jong-Ching; Yew, Tri Rung; Tsai, Ming Jinn; Chin, Tsung Shune.
In: Scripta Materialia, Vol. 64, No. 9, 01.05.2011, p. 801-804.Research output: Contribution to journal › Article
TY - JOUR
T1 - The use of Ga16Sb84 alloy for electronic phase-change memory
AU - Chang, Chih Chung
AU - Chao, Chien Tu
AU - Wu, Jong-Ching
AU - Yew, Tri Rung
AU - Tsai, Ming Jinn
AU - Chin, Tsung Shune
PY - 2011/5/1
Y1 - 2011/5/1
N2 - The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >105 cycles.
AB - The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >105 cycles.
UR - http://www.scopus.com/inward/record.url?scp=79952195713&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952195713&partnerID=8YFLogxK
U2 - 10.1016/j.scriptamat.2010.12.046
DO - 10.1016/j.scriptamat.2010.12.046
M3 - Article
VL - 64
SP - 801
EP - 804
JO - Scripta Materialia
JF - Scripta Materialia
SN - 1359-6462
IS - 9
ER -