The use of Ga16Sb84 alloy for electronic phase-change memory

Chih Chung Chang, Chien Tu Chao, Jong-Ching Wu, Tri Rung Yew, Ming Jinn Tsai, Tsung Shune Chin

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >105 cycles.

Original languageEnglish
Pages (from-to)801-804
Number of pages4
JournalScripta Materialia
Volume64
Issue number9
DOIs
Publication statusPublished - 2011 May 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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    Chang, C. C., Chao, C. T., Wu, J-C., Yew, T. R., Tsai, M. J., & Chin, T. S. (2011). The use of Ga16Sb84 alloy for electronic phase-change memory. Scripta Materialia, 64(9), 801-804. https://doi.org/10.1016/j.scriptamat.2010.12.046