The use of Ga16Sb84 alloy for electronic phase-change memory

Chih Chung Chang, Chien Tu Chao, Jong-Ching Wu, Tri Rung Yew, Ming Jinn Tsai, Tsung Shune Chin

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >105 cycles.

Original languageEnglish
Pages (from-to)801-804
Number of pages4
JournalScripta Materialia
Volume64
Issue number9
DOIs
Publication statusPublished - 2011 May 1

Fingerprint

Phase change memory
Crystallization
crystallization
electronics
conduction
Amorphous films
durability
Carrier concentration
pulse duration
Durability
Thermodynamic stability
thermal stability
Data storage equipment
Temperature
cycles
temperature
cells
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Chang, C. C., Chao, C. T., Wu, J-C., Yew, T. R., Tsai, M. J., & Chin, T. S. (2011). The use of Ga16Sb84 alloy for electronic phase-change memory. Scripta Materialia, 64(9), 801-804. https://doi.org/10.1016/j.scriptamat.2010.12.046
Chang, Chih Chung ; Chao, Chien Tu ; Wu, Jong-Ching ; Yew, Tri Rung ; Tsai, Ming Jinn ; Chin, Tsung Shune. / The use of Ga16Sb84 alloy for electronic phase-change memory. In: Scripta Materialia. 2011 ; Vol. 64, No. 9. pp. 801-804.
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Chang, CC, Chao, CT, Wu, J-C, Yew, TR, Tsai, MJ & Chin, TS 2011, 'The use of Ga16Sb84 alloy for electronic phase-change memory', Scripta Materialia, vol. 64, no. 9, pp. 801-804. https://doi.org/10.1016/j.scriptamat.2010.12.046

The use of Ga16Sb84 alloy for electronic phase-change memory. / Chang, Chih Chung; Chao, Chien Tu; Wu, Jong-Ching; Yew, Tri Rung; Tsai, Ming Jinn; Chin, Tsung Shune.

In: Scripta Materialia, Vol. 64, No. 9, 01.05.2011, p. 801-804.

Research output: Contribution to journalArticle

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