Abstract
The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >105 cycles.
Original language | English |
---|---|
Pages (from-to) | 801-804 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 64 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2011 May 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys