The switching characteristics of free layer of patterned magnetic tunnel junction device

C. C. Chen, Y. R. Wang, C. Y. Kuo, J. C. Wu, Lance Horng, Teho Wu, S. Yoshimura, M. Tsunoda, M. Takahashi

Research output: Contribution to journalArticle


The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M-H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The MR curve of the patterned element shows stepped minor loop, less loop shifting, and larger coercive field due to shape anisotropy and stray field effects. MFM images of the element show nonuniform domain structures during reversal process.

Original languageEnglish
Pages (from-to)e285-e287
JournalJournal of Magnetism and Magnetic Materials
Issue number1
Publication statusPublished - 2006 Sep 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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