The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope

Min Fong Shu, A. Canizo-Cabrera, Chih Cheng Hsu, C. C. Chen, Jong-Ching Wu, Chao Chen Yang, Te ho Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A magnetic tunneling junction (MTJ) with a structure of SiO2 20 nm/Ta 5 nm/Cu 20 nm/Ta 5 nm/NiFe 2 nm/Cu 5 nm/MnIr 10 nm/CoFe 4 nm/Al-O 1.5 nm/CoFe 4 nm/NiFe 20 nm/Ta 50 nm was measured by conducting atomic force microscopy (CAFM) to obtain I-V curves. The magnetoresistance (MR) ratio valued was determined from these I-V curves. Switching field of the free layer was obtained from hysteresis loop analysis derived by alternating gradient magnetometer (AGM). The MR ratio values were measured for several ramping DC bias voltage rates. We found that a low MR ratio was obtained with the highest ramping rate. Moreover, area-resistance (RA) value of MTJ device was also obtained.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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