The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope

Min Fong Shu, A. Canizo-Cabrera, Chih Cheng Hsu, C. C. Chen, Jong-Ching Wu, Chao Chen Yang, Te ho Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A magnetic tunneling junction (MTJ) with a structure of SiO2 20 nm/Ta 5 nm/Cu 20 nm/Ta 5 nm/NiFe 2 nm/Cu 5 nm/MnIr 10 nm/CoFe 4 nm/Al-O 1.5 nm/CoFe 4 nm/NiFe 20 nm/Ta 50 nm was measured by conducting atomic force microscopy (CAFM) to obtain I-V curves. The magnetoresistance (MR) ratio valued was determined from these I-V curves. Switching field of the free layer was obtained from hysteresis loop analysis derived by alternating gradient magnetometer (AGM). The MR ratio values were measured for several ramping DC bias voltage rates. We found that a low MR ratio was obtained with the highest ramping rate. Moreover, area-resistance (RA) value of MTJ device was also obtained.

Original languageEnglish
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

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Magnetoresistance
Bias voltage
Microscopes
direct current
microscopes
conduction
electric potential
curves
magnetometers
hysteresis
atomic force microscopy
Magnetometers
Hysteresis loops
gradients
Atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope",
abstract = "A magnetic tunneling junction (MTJ) with a structure of SiO2 20 nm/Ta 5 nm/Cu 20 nm/Ta 5 nm/NiFe 2 nm/Cu 5 nm/MnIr 10 nm/CoFe 4 nm/Al-O 1.5 nm/CoFe 4 nm/NiFe 20 nm/Ta 50 nm was measured by conducting atomic force microscopy (CAFM) to obtain I-V curves. The magnetoresistance (MR) ratio valued was determined from these I-V curves. Switching field of the free layer was obtained from hysteresis loop analysis derived by alternating gradient magnetometer (AGM). The MR ratio values were measured for several ramping DC bias voltage rates. We found that a low MR ratio was obtained with the highest ramping rate. Moreover, area-resistance (RA) value of MTJ device was also obtained.",
author = "Shu, {Min Fong} and A. Canizo-Cabrera and Hsu, {Chih Cheng} and Chen, {C. C.} and Jong-Ching Wu and Yang, {Chao Chen} and Wu, {Te ho}",
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The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope. / Shu, Min Fong; Canizo-Cabrera, A.; Hsu, Chih Cheng; Chen, C. C.; Wu, Jong-Ching; Yang, Chao Chen; Wu, Te ho.

In: Journal of Magnetism and Magnetic Materials, Vol. 304, No. 1, 01.09.2006.

Research output: Contribution to journalArticle

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T1 - The magnetoresistance ratio of an MTJ device and the influence of ramping DC bias voltage rate measured by conducting atomic force microscope

AU - Shu, Min Fong

AU - Canizo-Cabrera, A.

AU - Hsu, Chih Cheng

AU - Chen, C. C.

AU - Wu, Jong-Ching

AU - Yang, Chao Chen

AU - Wu, Te ho

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