The irreversible magnetization process in microstructured permalloy ellipses

Y. C. Chang; C. C. Chang; J. C. Wu

doi:10.1109/TMAG.2005.854925

The irreversible magnetization process in microstructured permalloy ellipses

Y. C. Chang, C. C. Chang, J. C. Wu

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Microstructured permalloy ellipses have been fabricated using electron-beam lithography through a lift-off process. The investigations were focused on the magnetization configurations and switching processes adopting magnetic force microscopy (MFM) and magnetoresistance (MR) measurements. An original five-vortex domain configuration of ellipse can be controlled and manipulated to become a four-vortex domain configuration by tuning the external magnetic field applied along the short-axis direction. In addition, an asymmetrical reversal process can be demonstrated on an ellipse having two- or three-vortex domain configuration, in which the switching fields are 36 Oe and 24 Oe, respectively.

Original language	English
Pages (from-to)	3742-3744
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.854925
Publication status	Published - 2005 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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AB - Microstructured permalloy ellipses have been fabricated using electron-beam lithography through a lift-off process. The investigations were focused on the magnetization configurations and switching processes adopting magnetic force microscopy (MFM) and magnetoresistance (MR) measurements. An original five-vortex domain configuration of ellipse can be controlled and manipulated to become a four-vortex domain configuration by tuning the external magnetic field applied along the short-axis direction. In addition, an asymmetrical reversal process can be demonstrated on an ellipse having two- or three-vortex domain configuration, in which the switching fields are 36 Oe and 24 Oe, respectively.

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