Abstract
The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cmVvs and on/off current ratio over 105
| Original language | English |
|---|---|
| Title of host publication | 22nd International Display Workshops, IDW 2015 |
| Publisher | International Display Workshops |
| Pages | 636-638 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781510845503 |
| Publication status | Published - 2015 Jan 1 |
| Event | 22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 2015 Dec 9 → 2015 Dec 11 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 22nd International Display Workshops, IDW 2015 |
|---|---|
| Country | Japan |
| City | Otsu |
| Period | 15-12-09 → 15-12-11 |
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All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
Cite this
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The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. / Huang, Cheng Yao; Tsay, Chung En; Wang, Yu-Wu.
22nd International Display Workshops, IDW 2015. International Display Workshops, 2015. p. 636-638 (Proceedings of the International Display Workshops; Vol. 2).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process
AU - Huang, Cheng Yao
AU - Tsay, Chung En
AU - Wang, Yu-Wu
PY - 2015/1/1
Y1 - 2015/1/1
N2 - The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cmVvs and on/off current ratio over 105
AB - The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cmVvs and on/off current ratio over 105
UR - http://www.scopus.com/inward/record.url?scp=85056373114&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056373114&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85056373114
T3 - Proceedings of the International Display Workshops
SP - 636
EP - 638
BT - 22nd International Display Workshops, IDW 2015
PB - International Display Workshops
ER -