@inproceedings{9fb49ab958034a95ad14b6d20b69b25e,
title = "The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process",
abstract = "The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cmVvs and on/off current ratio over 105 ",
author = "Huang, {Cheng Yao} and Tsay, {Chung En} and Yu-Wu Wang",
year = "2015",
month = jan,
day = "1",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "636--638",
booktitle = "22nd International Display Workshops, IDW 2015",
note = "22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",
}