The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process

Cheng Yao Huang, Chung En Tsay, Yu-Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cmVvs and on/off current ratio over 105

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages636-638
Number of pages3
ISBN (Electronic)9781510845503
Publication statusPublished - 2015 Jan 1
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 2015 Dec 92015 Dec 11

Publication series

NameProceedings of the International Display Workshops
Volume2
ISSN (Print)1883-2490

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period15-12-0915-12-11

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Huang, C. Y., Tsay, C. E., & Wang, Y-W. (2015). The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. In 22nd International Display Workshops, IDW 2015 (pp. 636-638). (Proceedings of the International Display Workshops; Vol. 2). International Display Workshops.