The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process

Cheng Yao Huang, Chung En Tsay, Yu-Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cm2/vs and on/off current ratio over 105.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages110-112
Number of pages3
Volume1
ISBN (Electronic)9781510845503
Publication statusPublished - 2015 Jan 1
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 2015 Dec 92015 Dec 11

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period15-12-0915-12-11

Fingerprint

Zinc Oxide
Semiconductors
Thin film transistors
Zinc oxide
Oxides
Oxide films
Gels
Polymethyl Methacrylate
Tin oxides
Sol-gel process
Semiconductor materials
Oxide semiconductors
stannic oxide

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Huang, C. Y., Tsay, C. E., & Wang, Y-W. (2015). The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. In 22nd International Display Workshops, IDW 2015 (Vol. 1, pp. 110-112). International Display Workshops.
Huang, Cheng Yao ; Tsay, Chung En ; Wang, Yu-Wu. / The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. 22nd International Display Workshops, IDW 2015. Vol. 1 International Display Workshops, 2015. pp. 110-112
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Huang, CY, Tsay, CE & Wang, Y-W 2015, The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. in 22nd International Display Workshops, IDW 2015. vol. 1, International Display Workshops, pp. 110-112, 22nd International Display Workshops, IDW 2015, Otsu, Japan, 15-12-09.

The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. / Huang, Cheng Yao; Tsay, Chung En; Wang, Yu-Wu.

22nd International Display Workshops, IDW 2015. Vol. 1 International Display Workshops, 2015. p. 110-112.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Huang CY, Tsay CE, Wang Y-W. The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process. In 22nd International Display Workshops, IDW 2015. Vol. 1. International Display Workshops. 2015. p. 110-112