The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process

Cheng Yao Huang, Chung En Tsay, Yu-Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effects of multi-stack oxide semiconductor layers on TFT. ZnO based semiconductors are processed sequentially as active multi-layer through sol-gel process. Tin/zinc oxide is as the donor provider and Ga/zinc oxide is as the resist layer. The result highest mobility reaches 6.4 cm2/vs and on/off current ratio over 105.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages110-112
Number of pages3
Volume1
ISBN (Electronic)9781510845503
Publication statusPublished - 2015 Jan 1
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 2015 Dec 92015 Dec 11

Other

Other22nd International Display Workshops, IDW 2015
CountryJapan
CityOtsu
Period15-12-0915-12-11

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Fingerprint Dive into the research topics of 'The investigation of stacking multi-layers oxide thin film transistors fabricated by so-gel process'. Together they form a unique fingerprint.

Cite this