Abstract
We investigated the characteristics transition of solution processed Rubrene transistors under various annealing temperature and concentrations. Rubrene has been proven as a high potential organic semiconductor. Solution process promises its application in large area coating and cost down. The fabricated device achieved a mobility ~I0-4 cm2/vs and on/off ratio ~103.
| Original language | English |
|---|---|
| Title of host publication | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
| Publisher | Society for Information Display |
| Pages | 1283-1285 |
| Number of pages | 3 |
| Volume | 2 |
| ISBN (Electronic) | 9781510845510 |
| Publication status | Published - 2016 Jan 1 |
| Event | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan Duration: 2016 Dec 7 → 2016 Dec 9 |
Other
| Other | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Country | Japan |
| City | Fukuoka |
| Period | 16-12-07 → 16-12-09 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Chene, Y. H., Lai, P. C., Tsai, P. Y., Fan, K. C., & Wang, Y. W. (2016). The investigation of solution process rubrene transistors under different annealing conditions. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (Vol. 2, pp. 1283-1285). Society for Information Display.