The investigation of solution process rubrene transistors under different annealing conditions

Yu Han Chene, Ping Chieh Lai, Ping Yin Tsai, Kang Chih Fan, Yu Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the characteristics transition of solution processed Rubrene transistors under various annealing temperature and concentrations. Rubrene has been proven as a high potential organic semiconductor. Solution process promises its application in large area coating and cost down. The fabricated device achieved a mobility ~I0-4 cm2/vs and on/off ratio ~103.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages1283-1285
Number of pages3
Volume2
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16-12-0716-12-09

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All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chene, Y. H., Lai, P. C., Tsai, P. Y., Fan, K. C., & Wang, Y. W. (2016). The investigation of solution process rubrene transistors under different annealing conditions. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (Vol. 2, pp. 1283-1285). Society for Information Display.