Abstract
We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.
| Original language | English |
|---|---|
| Title of host publication | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
| Publisher | Society for Information Display |
| Pages | 157-160 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510845510 |
| Publication status | Published - 2016 Jan 1 |
| Event | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan Duration: 2016 Dec 7 → 2016 Dec 9 |
Publication series
| Name | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Volume | 1 |
Other
| Other | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Country | Japan |
| City | Fukuoka |
| Period | 16-12-07 → 16-12-09 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
}
The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. / He, Nai Xiang; Chen, Wei Xiang; Chen, Wei An; Chen, Shi Jie; Wang, Yu Wu.
23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display, 2016. p. 157-160 (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping
AU - He, Nai Xiang
AU - Chen, Wei Xiang
AU - Chen, Wei An
AU - Chen, Shi Jie
AU - Wang, Yu Wu
PY - 2016/1/1
Y1 - 2016/1/1
N2 - We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.
AB - We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.
UR - http://www.scopus.com/inward/record.url?scp=85050620514&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050620514&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85050620514
T3 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
SP - 157
EP - 160
BT - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PB - Society for Information Display
ER -