The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping

Nai Xiang He; Wei Xiang Chen; Wei An Chen; Shi Jie Chen; Yu Wu Wang

The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping

Nai Xiang He, Wei Xiang Chen, Wei An Chen, Shi Jie Chen, Yu Wu Wang

Graduate Institute of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm²/Vs was achieved.

Original language	English
Title of host publication	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Publisher	Society for Information Display
Pages	157-160
Number of pages	4
ISBN (Electronic)	9781510845510
Publication status	Published - 2016 Jan 1
Event	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan Duration: 2016 Dec 7 → 2016 Dec 9

Publication series

Name	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume	1

Other

Other	23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Country	Japan
City	Fukuoka
Period	16-12-07 → 16-12-09

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Human-Computer Interaction
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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He, N. X., Chen, W. X., Chen, W. A., Chen, S. J., & Wang, Y. W. (2016). The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 157-160). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1). Society for Information Display.

He, Nai Xiang ; Chen, Wei Xiang ; Chen, Wei An ; Chen, Shi Jie ; Wang, Yu Wu. / The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display, 2016. pp. 157-160 (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016).

@inproceedings{619228f13e84484dbe7b1542beedb3ba,

title = "The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping",

abstract = "We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.",

author = "He, {Nai Xiang} and Chen, {Wei Xiang} and Chen, {Wei An} and Chen, {Shi Jie} and Wang, {Yu Wu}",

year = "2016",

month = jan,

day = "1",

language = "English",

series = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",

publisher = "Society for Information Display",

pages = "157--160",

booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",

address = "United States",

note = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",

}

He, NX, Chen, WX, Chen, WA, Chen, SJ & Wang, YW 2016, The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. in 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, vol. 1, Society for Information Display, pp. 157-160, 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016, Fukuoka, Japan, 16-12-07.

The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. / He, Nai Xiang; Chen, Wei Xiang; Chen, Wei An; Chen, Shi Jie; Wang, Yu Wu.

23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display, 2016. p. 157-160 (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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PY - 2016/1/1

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N2 - We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.

AB - We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.

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He NX, Chen WX, Chen WA, Chen SJ, Wang YW. The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016. Society for Information Display. 2016. p. 157-160. (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016).