The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping

Nai Xiang He, Wei Xiang Chen, Wei An Chen, Shi Jie Chen, Yu Wu Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages157-160
Number of pages4
ISBN (Electronic)9781510845510
Publication statusPublished - 2016 Jan 1
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 2016 Dec 72016 Dec 9

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume1

Other

Other23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
CountryJapan
CityFukuoka
Period16-12-0716-12-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    He, N. X., Chen, W. X., Chen, W. A., Chen, S. J., & Wang, Y. W. (2016). The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 157-160). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1). Society for Information Display.