Abstract
We investigated the characteristics transition of sol-gel processed Zinc-Tin-Oxide transistors with different metal dopant. The annealing conditions conducted different temperature and atmospheres. The result showed that moderate metal dopant could lower down the process temperature and increase its stability in ambient air. The highest mobility ∼2.4 cm2/Vs was achieved.
| Original language | English |
|---|---|
| Title of host publication | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
| Publisher | Society for Information Display |
| Pages | 157-160 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510845510 |
| Publication status | Published - 2016 Jan 1 |
| Event | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan Duration: 2016 Dec 7 → 2016 Dec 9 |
Publication series
| Name | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Volume | 1 |
Other
| Other | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 |
|---|---|
| Country | Japan |
| City | Fukuoka |
| Period | 16-12-07 → 16-12-09 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Human-Computer Interaction
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
He, N. X., Chen, W. X., Chen, W. A., Chen, S. J., & Wang, Y. W. (2016). The investigation of annealing temperature and atmosphere effect on solution process ZTO transistors with different metal composite doping. In 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 (pp. 157-160). (23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016; Vol. 1). Society for Information Display.