The investigation for the time-dependent characteristics of sol-gel processed Zinc-Tin-Oxide (ZTO) transistors

Yu-Wu Wang, Cong Ming Jian, Hsiu Hua Wang, Liu Wei Luen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the effect of time-dependent characteristics variation of sol-gel zinc-tin-oxide (ZTO) transistors. The sol-gel ZTO transistor could achieve a maximum field effect mobility of 2.7 cm2/vs, on/off ratio over 105 and a sharpest sub-threshold slop of 0.9 V/decade. The devices have a trend to perform better as time passing.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages278-281
Number of pages4
ISBN (Electronic)9781510827790
Publication statusPublished - 2014 Jan 1
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 2014 Dec 32014 Dec 5

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Other

Other21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period14-12-0314-12-05

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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