The influence of the LT-InN buffer growth conditions on the quality of InN films grown on Si(1 1 1) substrate by MBE

Yan Hsin Wang, Wei Li Chen

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8 Citations (Scopus)

Abstract

This work aims to explore the effect of the growth conditions of low-temperature InN (LT-InN) buffer layers on the quality of wurtzite InN films grown on Si(1 1 1) substrates by plasma-assisted molecular beam epitaxy (PA-MBE). Experimental results indicated that higher growth rate and lower thickness of LT-InN buffer layer guarantee better crystalline quality and optical properties for InN films grown at the same temperature. The crystalline quality of the InN epilayers was investigated by high-resolution X-ray diffraction (XRD) performed on the reflection plans of various inclination angles. XRD study confirmed that the dominating threading dislocation was edge type. Surface morphology was measured by atomic force microscope (AFM), and optical property was characterized by photoluminescence (PL). The best InN film was obtained from the sample with a 20 nm LT-InN buffer layer, 140 nm/h growth rate, and 500 °C HT-InN growth temperature. The characterization results showed 2.785×1010 cm-2 edge-type dislocation density estimated by XRD, 11.57 nm AFM RMS roughness, and 0.666 eV near band-edge PL transition at 15 K with 24 meV broadening.

Original languageEnglish
Pages (from-to)848-851
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume41
Issue number5
DOIs
Publication statusPublished - 2009 Mar 1

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Molecular beam epitaxy
Buffers
Buffer layers
buffers
Substrates
X ray diffraction
Photoluminescence
Microscopes
Optical properties
microscopes
diffraction
Crystalline materials
photoluminescence
optical properties
Edge dislocations
Temperature
x rays
Epilayers
edge dislocations
Growth temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

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title = "The influence of the LT-InN buffer growth conditions on the quality of InN films grown on Si(1 1 1) substrate by MBE",
abstract = "This work aims to explore the effect of the growth conditions of low-temperature InN (LT-InN) buffer layers on the quality of wurtzite InN films grown on Si(1 1 1) substrates by plasma-assisted molecular beam epitaxy (PA-MBE). Experimental results indicated that higher growth rate and lower thickness of LT-InN buffer layer guarantee better crystalline quality and optical properties for InN films grown at the same temperature. The crystalline quality of the InN epilayers was investigated by high-resolution X-ray diffraction (XRD) performed on the reflection plans of various inclination angles. XRD study confirmed that the dominating threading dislocation was edge type. Surface morphology was measured by atomic force microscope (AFM), and optical property was characterized by photoluminescence (PL). The best InN film was obtained from the sample with a 20 nm LT-InN buffer layer, 140 nm/h growth rate, and 500 °C HT-InN growth temperature. The characterization results showed 2.785×1010 cm-2 edge-type dislocation density estimated by XRD, 11.57 nm AFM RMS roughness, and 0.666 eV near band-edge PL transition at 15 K with 24 meV broadening.",
author = "Wang, {Yan Hsin} and Chen, {Wei Li}",
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AU - Chen, Wei Li

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N2 - This work aims to explore the effect of the growth conditions of low-temperature InN (LT-InN) buffer layers on the quality of wurtzite InN films grown on Si(1 1 1) substrates by plasma-assisted molecular beam epitaxy (PA-MBE). Experimental results indicated that higher growth rate and lower thickness of LT-InN buffer layer guarantee better crystalline quality and optical properties for InN films grown at the same temperature. The crystalline quality of the InN epilayers was investigated by high-resolution X-ray diffraction (XRD) performed on the reflection plans of various inclination angles. XRD study confirmed that the dominating threading dislocation was edge type. Surface morphology was measured by atomic force microscope (AFM), and optical property was characterized by photoluminescence (PL). The best InN film was obtained from the sample with a 20 nm LT-InN buffer layer, 140 nm/h growth rate, and 500 °C HT-InN growth temperature. The characterization results showed 2.785×1010 cm-2 edge-type dislocation density estimated by XRD, 11.57 nm AFM RMS roughness, and 0.666 eV near band-edge PL transition at 15 K with 24 meV broadening.

AB - This work aims to explore the effect of the growth conditions of low-temperature InN (LT-InN) buffer layers on the quality of wurtzite InN films grown on Si(1 1 1) substrates by plasma-assisted molecular beam epitaxy (PA-MBE). Experimental results indicated that higher growth rate and lower thickness of LT-InN buffer layer guarantee better crystalline quality and optical properties for InN films grown at the same temperature. The crystalline quality of the InN epilayers was investigated by high-resolution X-ray diffraction (XRD) performed on the reflection plans of various inclination angles. XRD study confirmed that the dominating threading dislocation was edge type. Surface morphology was measured by atomic force microscope (AFM), and optical property was characterized by photoluminescence (PL). The best InN film was obtained from the sample with a 20 nm LT-InN buffer layer, 140 nm/h growth rate, and 500 °C HT-InN growth temperature. The characterization results showed 2.785×1010 cm-2 edge-type dislocation density estimated by XRD, 11.57 nm AFM RMS roughness, and 0.666 eV near band-edge PL transition at 15 K with 24 meV broadening.

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