The influence of cross-tie wall on the magnetoresistance of patterned permalloy films

J. C. Wu; H. M. Lee

The influence of cross-tie wall on the magnetoresistance of patterned permalloy films

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.

Original language	English
Pages (from-to)	EU09
Journal	Digests of the Intermag Conference
Publication status	Published - 2002 Dec 1
Event	2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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title = "The influence of cross-tie wall on the magnetoresistance of patterned permalloy films",

abstract = "The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.",

author = "Wu, {J. C.} and Lee, {H. M.}",

year = "2002",

month = dec,

day = "1",

language = "English",

pages = "EU09",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

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note = "2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG ; Conference date: 28-04-2002 Through 02-05-2002",

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T1 - The influence of cross-tie wall on the magnetoresistance of patterned permalloy films

AU - Wu, J. C.

AU - Lee, H. M.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.

AB - The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.

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M3 - Conference article

AN - SCOPUS:0036912972

SP - EU09

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

SN - 0074-6843

T2 - 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG

Y2 - 28 April 2002 through 2 May 2002

ER -