The influence of cross-tie wall on the magnetoresistance of patterned permalloy films

J. C. Wu, H. M. Lee

Research output: Contribution to journalConference article

Abstract

The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.

Original languageEnglish
Pages (from-to)EU09
JournalDigests of the Intermag Conference
Publication statusPublished - 2002 Dec 1
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

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Magnetoresistance
Aspect ratio
Magnetic domains

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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title = "The influence of cross-tie wall on the magnetoresistance of patterned permalloy films",
abstract = "The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.",
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The influence of cross-tie wall on the magnetoresistance of patterned permalloy films. / Wu, J. C.; Lee, H. M.

In: Digests of the Intermag Conference, 01.12.2002, p. EU09.

Research output: Contribution to journalConference article

TY - JOUR

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AU - Lee, H. M.

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N2 - The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.

AB - The influence of cross-tie wall on the magnetoresistance (MR) of patterned permalloy films was discussed. The influence of the magnetic domain structure on the MR curve and the aspect ratio dependence of coercive or saturation fields was also discussed. The higher aspect ratios of the device had shown single domain configuration and a sharp transition in MR curves.

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