The finite element analysis study of the laser lift-off (LLO) of III-nitride compound

Yan Hsin Wang, Wei Li Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.

Original languageEnglish
Title of host publicationIntelligent Technologies and Engineering Systems
Pages821-827
Number of pages7
DOIs
Publication statusPublished - 2013 Aug 8
Event2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012 - Changhua, Taiwan
Duration: 2012 Dec 132012 Dec 15

Publication series

NameLecture Notes in Electrical Engineering
Volume234 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

Other2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012
CountryTaiwan
CityChanghua
Period12-12-1312-12-15

Fingerprint

Nitrides
Finite element method
Gaussian beams
Lasers
Thermal stress
Sapphire
Thermal gradients
Temperature distribution
Semiconductor materials
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

Cite this

Wang, Y. H., & Chen, W. L. (2013). The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. In Intelligent Technologies and Engineering Systems (pp. 821-827). (Lecture Notes in Electrical Engineering; Vol. 234 LNEE). https://doi.org/10.1007/978-1-4614-6747-2_94
Wang, Yan Hsin ; Chen, Wei Li. / The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. Intelligent Technologies and Engineering Systems. 2013. pp. 821-827 (Lecture Notes in Electrical Engineering).
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Wang, YH & Chen, WL 2013, The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. in Intelligent Technologies and Engineering Systems. Lecture Notes in Electrical Engineering, vol. 234 LNEE, pp. 821-827, 2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012, Changhua, Taiwan, 12-12-13. https://doi.org/10.1007/978-1-4614-6747-2_94

The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. / Wang, Yan Hsin; Chen, Wei Li.

Intelligent Technologies and Engineering Systems. 2013. p. 821-827 (Lecture Notes in Electrical Engineering; Vol. 234 LNEE).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wang YH, Chen WL. The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. In Intelligent Technologies and Engineering Systems. 2013. p. 821-827. (Lecture Notes in Electrical Engineering). https://doi.org/10.1007/978-1-4614-6747-2_94