Abstract
ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.
| Original language | English |
|---|---|
| Title of host publication | Intelligent Technologies and Engineering Systems |
| Pages | 821-827 |
| Number of pages | 7 |
| DOIs | |
| Publication status | Published - 2013 Aug 8 |
| Event | 2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012 - Changhua, Taiwan Duration: 2012 Dec 13 → 2012 Dec 15 |
Publication series
| Name | Lecture Notes in Electrical Engineering |
|---|---|
| Volume | 234 LNEE |
| ISSN (Print) | 1876-1100 |
| ISSN (Electronic) | 1876-1119 |
Other
| Other | 2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012 |
|---|---|
| Country | Taiwan |
| City | Changhua |
| Period | 12-12-13 → 12-12-15 |
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All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
Cite this
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The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. / Wang, Yan Hsin; Chen, Wei Li.
Intelligent Technologies and Engineering Systems. 2013. p. 821-827 (Lecture Notes in Electrical Engineering; Vol. 234 LNEE).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - The finite element analysis study of the laser lift-off (LLO) of III-nitride compound
AU - Wang, Yan Hsin
AU - Chen, Wei Li
PY - 2013/8/8
Y1 - 2013/8/8
N2 - ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.
AB - ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.
UR - http://www.scopus.com/inward/record.url?scp=84881046184&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84881046184&partnerID=8YFLogxK
U2 - 10.1007/978-1-4614-6747-2_94
DO - 10.1007/978-1-4614-6747-2_94
M3 - Conference contribution
AN - SCOPUS:84881046184
SN - 9781461467465
T3 - Lecture Notes in Electrical Engineering
SP - 821
EP - 827
BT - Intelligent Technologies and Engineering Systems
ER -