The finite element analysis study of the laser lift-off (LLO) of III-nitride compound

Yan Hsin Wang; Wei Li Chen

doi:10.1007/978-1-4614-6747-2_94

The finite element analysis study of the laser lift-off (LLO) of III-nitride compound

Yan Hsin Wang, Wei Li Chen

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm ², the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm² fluence or multiple pulses of fluence down to 95mJ/cm². The result shows that when six successive 95mJ/cm ² pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm² pulse to 0.332GPa.

Original language	English
Title of host publication	Intelligent Technologies and Engineering Systems
Pages	821-827
Number of pages	7
DOIs	https://doi.org/10.1007/978-1-4614-6747-2_94
Publication status	Published - 2013 Aug 8
Event	2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012 - Changhua, Taiwan Duration: 2012 Dec 13 → 2012 Dec 15

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	234 LNEE
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Other

Other	2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012
Country	Taiwan
City	Changhua
Period	12-12-13 → 12-12-15

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering

Access to Document

10.1007/978-1-4614-6747-2_94

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Wang, Y. H., & Chen, W. L. (2013). The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. In Intelligent Technologies and Engineering Systems (pp. 821-827). (Lecture Notes in Electrical Engineering; Vol. 234 LNEE). https://doi.org/10.1007/978-1-4614-6747-2_94

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abstract = "ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.",

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Wang, YH & Chen, WL 2013, The finite element analysis study of the laser lift-off (LLO) of III-nitride compound. in Intelligent Technologies and Engineering Systems. Lecture Notes in Electrical Engineering, vol. 234 LNEE, pp. 821-827, 2012 1st International Conference on Intelligent Technologies and Engineering Systems, ICITES 2012, Changhua, Taiwan, 12-12-13. https://doi.org/10.1007/978-1-4614-6747-2_94

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N2 - ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.

AB - ANSYS was used to simulate the temperature field of the nitride semiconductor compound in the laser lift-off (LLO) process. One-dimension thermal conduction model is formulated. When the fluence is 107mJ/cm 2, the InN temperature starts to rise up, coupled with a large temperature gradient across the InN film, to above 600 C for a region within 108nm below the irradiated InN/sapphire interface. The diameter of the beam spot is 300μm, but the diameter of the decomposed area is around 100μm for InN due to Gaussian beam shape. For GaN, LLO can be achieved by using either a single pulse of 350mJ/cm2 fluence or multiple pulses of fluence down to 95mJ/cm2. The result shows that when six successive 95mJ/cm 2 pulses are used, the thermal stress can be greatly reduced from 0.929GPa in the case of a single 350mJ/cm2 pulse to 0.332GPa.

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