Abstract
Ca0.98Bi0.02Mn1-xSixO 3-δ (x = 0.00, 0.02 and 0.03) samples are prepared by solid state reaction. All the samples are single phase with an orthorhombic structure. A metal-like behavior is observed for x = 0.00, and it switches to nonmetal-like behavior for x = 0.03. Co-substituting bismuth for calcium and silicon for manganese could modify the electronic states and hence the transport properties. The thermopower of all the samples is negative, indicating that the predominant carriers are electrons over the entire temperature range. The electrical resistivity, thermopower increase and thermal conductivity decreases with increasing Si content. Among the samples, Ca0.98Bi 0.02Mn0.98Si0.02O3-δ exhibits the highest dimensionless figure of merit (0.045), which is about 84% higher than that of the undoped at 540 K. Magnetic moments of doped samples decrease as compared to undoped sample. The Neel temperature occurred at around 120 K for all the samples.
| Original language | English |
|---|---|
| Pages (from-to) | 48-53 |
| Number of pages | 6 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 186 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Aug |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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The effects of Si doping on the thermoelectric and magnetic properties of Ca0.98Bi0.02Mn1-xSixO 3-δ with x = 0.00, 0.02 and 0.03. / Bhaskar, Ankam; Yuan, J. J.; Liu, Chia Jyi.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 186, No. 1, 08.2014, p. 48-53.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effects of Si doping on the thermoelectric and magnetic properties of Ca0.98Bi0.02Mn1-xSixO 3-δ with x = 0.00, 0.02 and 0.03
AU - Bhaskar, Ankam
AU - Yuan, J. J.
AU - Liu, Chia Jyi
PY - 2014/8
Y1 - 2014/8
N2 - Ca0.98Bi0.02Mn1-xSixO 3-δ (x = 0.00, 0.02 and 0.03) samples are prepared by solid state reaction. All the samples are single phase with an orthorhombic structure. A metal-like behavior is observed for x = 0.00, and it switches to nonmetal-like behavior for x = 0.03. Co-substituting bismuth for calcium and silicon for manganese could modify the electronic states and hence the transport properties. The thermopower of all the samples is negative, indicating that the predominant carriers are electrons over the entire temperature range. The electrical resistivity, thermopower increase and thermal conductivity decreases with increasing Si content. Among the samples, Ca0.98Bi 0.02Mn0.98Si0.02O3-δ exhibits the highest dimensionless figure of merit (0.045), which is about 84% higher than that of the undoped at 540 K. Magnetic moments of doped samples decrease as compared to undoped sample. The Neel temperature occurred at around 120 K for all the samples.
AB - Ca0.98Bi0.02Mn1-xSixO 3-δ (x = 0.00, 0.02 and 0.03) samples are prepared by solid state reaction. All the samples are single phase with an orthorhombic structure. A metal-like behavior is observed for x = 0.00, and it switches to nonmetal-like behavior for x = 0.03. Co-substituting bismuth for calcium and silicon for manganese could modify the electronic states and hence the transport properties. The thermopower of all the samples is negative, indicating that the predominant carriers are electrons over the entire temperature range. The electrical resistivity, thermopower increase and thermal conductivity decreases with increasing Si content. Among the samples, Ca0.98Bi 0.02Mn0.98Si0.02O3-δ exhibits the highest dimensionless figure of merit (0.045), which is about 84% higher than that of the undoped at 540 K. Magnetic moments of doped samples decrease as compared to undoped sample. The Neel temperature occurred at around 120 K for all the samples.
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U2 - 10.1016/j.mseb.2014.03.009
DO - 10.1016/j.mseb.2014.03.009
M3 - Article
AN - SCOPUS:84897406942
VL - 186
SP - 48
EP - 53
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1
ER -