THE DEVELOPMENT of PERPENDICULAR MAGNETIC TUNNELING JUNCTIONS

Huang Ming Lee, Yen Chi Lee, Hao Hsuan Chen, Lance Horng, Jong Ching Wu, Ching Ming Lee, Te Ho Wu, Gung Chern

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10 Citations (Scopus)

Abstract

This paper reviews the progress made over the last few years in understanding the development of perpendicular magnetic tunneling junctions (pMTJs). The material systems for making pMTJs, including rare-earth/transition metal alloys, L10-ordered (Co, Fe)-Pt alloys, Co/(Pd, Pt) multilayers, and CoFeB-MgO crystallized structures, are briefly introduced. The fabrication processes of the MTJ devices are focused on, consisting of open-trench, etch-back and self-aligned techniques. The authors also propose a spin-torque nano-oscillator based on pMTJ, for application in GHz range telecommunications.

Original languageEnglish
Article number1230002
JournalSPIN
Volume2
Issue number1
DOIs
Publication statusPublished - 2012 Mar 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Lee, H. M., Lee, Y. C., Chen, H. H., Horng, L., Wu, J. C., Lee, C. M., Wu, T. H., & Chern, G. (2012). THE DEVELOPMENT of PERPENDICULAR MAGNETIC TUNNELING JUNCTIONS. SPIN, 2(1), [1230002]. https://doi.org/10.1142/S2010324712300022