The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics

Yu-Wu Wang, Po Hsiang Fang, Ang Chung Cheng, Wei-Chia Su, Po Ren Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages391-394
Number of pages4
Publication statusPublished - 2012 Dec 1
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12-12-0412-12-07

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All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Wang, Y-W., Fang, P. H., Cheng, A. C., Su, W-C., & Lin, P. R. (2012). The comparison of lithium doping impact to solution processed ZnO/InZnO thin film transistors' characteristics. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (pp. 391-394). (Proceedings of the International Display Workshops; Vol. 1).