The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers

Yi An Chang, Tsung Shine Ko, Jun Rong Chen, Fang I. Lai, Chun Lung Yu, I. Tsung Wu, Hao Chung Kuo, Yen Kuang Kuo, Li Wen Laih, Li Horng Laih, Tin Chang Lu, Shing Chung Wang

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Abstract

In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al0.75Ga 0.25As or 13 nm thick Al0.9Ga0.1As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were also experimentally demonstrated. It was found that the threshold current was reduced from 1.47 to 1.33 mA and the slope efficiency was increased from 0.37 to 0.53 mW mA-1 by inserting a 10 nm thick Al 0.75Ga0.25As electron blocking layer. Also, the device became less sensitive to the device temperature, where the amount of increase in the threshold current at an elevated temperature of 95 °C was only 0.27 mA and the slope efficiency dropped by only 24.5%. A peak frequency response of nearly 9 GHz at 5 mA, measured from relative intensity noise (RIN), was obtained in these VCSEL devices.

Original languageEnglish
Article number023
Pages (from-to)1488-1494
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number10
DOIs
Publication statusPublished - 2006 Oct 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Chang, Y. A., Ko, T. S., Chen, J. R., Lai, F. I., Yu, C. L., Wu, I. T., Kuo, H. C., Kuo, Y. K., Laih, L. W., Laih, L. H., Lu, T. C., & Wang, S. C. (2006). The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers. Semiconductor Science and Technology, 21(10), 1488-1494. [023]. https://doi.org/10.1088/0268-1242/21/10/023