The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers

Yi An Chang, Tsung Shine Ko, Jun Rong Chen, Fang I. Lai, Chun Lung Yu, I. Tsung Wu, Hao Chung Kuo, Yen Kuang Kuo, Li Wen Laih, Li Horng Laih, Tin Chang Lu, Shing Chung Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al0.75Ga 0.25As or 13 nm thick Al0.9Ga0.1As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were also experimentally demonstrated. It was found that the threshold current was reduced from 1.47 to 1.33 mA and the slope efficiency was increased from 0.37 to 0.53 mW mA-1 by inserting a 10 nm thick Al 0.75Ga0.25As electron blocking layer. Also, the device became less sensitive to the device temperature, where the amount of increase in the threshold current at an elevated temperature of 95 °C was only 0.27 mA and the slope efficiency dropped by only 24.5%. A peak frequency response of nearly 9 GHz at 5 mA, measured from relative intensity noise (RIN), was obtained in these VCSEL devices.

Original languageEnglish
Article number023
Pages (from-to)1488-1494
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number10
DOIs
Publication statusPublished - 2006 Oct 10

Fingerprint

Surface emitting lasers
surface emitting lasers
aluminum gallium arsenides
cavities
Electrons
threshold currents
Semiconductor quantum wells
Frequency response
Energy gap
slopes
Temperature
electrons
Lasers
noise intensity
laser outputs
frequency response
quantum wells
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chang, Yi An ; Ko, Tsung Shine ; Chen, Jun Rong ; Lai, Fang I. ; Yu, Chun Lung ; Wu, I. Tsung ; Kuo, Hao Chung ; Kuo, Yen Kuang ; Laih, Li Wen ; Laih, Li Horng ; Lu, Tin Chang ; Wang, Shing Chung. / The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 10. pp. 1488-1494.
@article{a2c46246d896431f9586041247da517a,
title = "The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers",
abstract = "In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al0.75Ga 0.25As or 13 nm thick Al0.9Ga0.1As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were also experimentally demonstrated. It was found that the threshold current was reduced from 1.47 to 1.33 mA and the slope efficiency was increased from 0.37 to 0.53 mW mA-1 by inserting a 10 nm thick Al 0.75Ga0.25As electron blocking layer. Also, the device became less sensitive to the device temperature, where the amount of increase in the threshold current at an elevated temperature of 95 °C was only 0.27 mA and the slope efficiency dropped by only 24.5{\%}. A peak frequency response of nearly 9 GHz at 5 mA, measured from relative intensity noise (RIN), was obtained in these VCSEL devices.",
author = "Chang, {Yi An} and Ko, {Tsung Shine} and Chen, {Jun Rong} and Lai, {Fang I.} and Yu, {Chun Lung} and Wu, {I. Tsung} and Kuo, {Hao Chung} and Kuo, {Yen Kuang} and Laih, {Li Wen} and Laih, {Li Horng} and Lu, {Tin Chang} and Wang, {Shing Chung}",
year = "2006",
month = "10",
day = "10",
doi = "10.1088/0268-1242/21/10/023",
language = "English",
volume = "21",
pages = "1488--1494",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "10",

}

Chang, YA, Ko, TS, Chen, JR, Lai, FI, Yu, CL, Wu, IT, Kuo, HC, Kuo, YK, Laih, LW, Laih, LH, Lu, TC & Wang, SC 2006, 'The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers', Semiconductor Science and Technology, vol. 21, no. 10, 023, pp. 1488-1494. https://doi.org/10.1088/0268-1242/21/10/023

The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers. / Chang, Yi An; Ko, Tsung Shine; Chen, Jun Rong; Lai, Fang I.; Yu, Chun Lung; Wu, I. Tsung; Kuo, Hao Chung; Kuo, Yen Kuang; Laih, Li Wen; Laih, Li Horng; Lu, Tin Chang; Wang, Shing Chung.

In: Semiconductor Science and Technology, Vol. 21, No. 10, 023, 10.10.2006, p. 1488-1494.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers

AU - Chang, Yi An

AU - Ko, Tsung Shine

AU - Chen, Jun Rong

AU - Lai, Fang I.

AU - Yu, Chun Lung

AU - Wu, I. Tsung

AU - Kuo, Hao Chung

AU - Kuo, Yen Kuang

AU - Laih, Li Wen

AU - Laih, Li Horng

AU - Lu, Tin Chang

AU - Wang, Shing Chung

PY - 2006/10/10

Y1 - 2006/10/10

N2 - In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al0.75Ga 0.25As or 13 nm thick Al0.9Ga0.1As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were also experimentally demonstrated. It was found that the threshold current was reduced from 1.47 to 1.33 mA and the slope efficiency was increased from 0.37 to 0.53 mW mA-1 by inserting a 10 nm thick Al 0.75Ga0.25As electron blocking layer. Also, the device became less sensitive to the device temperature, where the amount of increase in the threshold current at an elevated temperature of 95 °C was only 0.27 mA and the slope efficiency dropped by only 24.5%. A peak frequency response of nearly 9 GHz at 5 mA, measured from relative intensity noise (RIN), was obtained in these VCSEL devices.

AB - In this study, the carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting layers (VCSELs) was theoretically and experimentally investigated. By means of inserting a high-bandgap electron blocking layer, which was either 10 nm thick Al0.75Ga 0.25As or 13 nm thick Al0.9Ga0.1As, on the p-side of a quantum-well active region, the laser output performance was theoretically found to be improved. VCSELs with and without an electron blocking layer were also experimentally demonstrated. It was found that the threshold current was reduced from 1.47 to 1.33 mA and the slope efficiency was increased from 0.37 to 0.53 mW mA-1 by inserting a 10 nm thick Al 0.75Ga0.25As electron blocking layer. Also, the device became less sensitive to the device temperature, where the amount of increase in the threshold current at an elevated temperature of 95 °C was only 0.27 mA and the slope efficiency dropped by only 24.5%. A peak frequency response of nearly 9 GHz at 5 mA, measured from relative intensity noise (RIN), was obtained in these VCSEL devices.

UR - http://www.scopus.com/inward/record.url?scp=33748867991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748867991&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/10/023

DO - 10.1088/0268-1242/21/10/023

M3 - Article

AN - SCOPUS:33748867991

VL - 21

SP - 1488

EP - 1494

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

M1 - 023

ER -