Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

Ting Hong Su, Ming Yang Chen, Wei Shiuan Huang, Yow Jon Lin

Research output: Contribution to journalArticle

Abstract

This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p+-Si)/indium devices. A gold/PMMA:BP/p+-Si/indium device exhibits RS behavior, but a gold/PMMA/p+-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p+-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the RS performance for gold/PMMA:BP/p+-Si/indium devices.

Original languageEnglish
JournalIndian Journal of Physics
DOIs
Publication statusAccepted/In press - 2020

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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