Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

Ting Hong Su; Ming Yang Chen; Wei Shiuan Huang; Yow Jon Lin

doi:10.1007/s12648-020-01818-z

Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

Ting Hong Su, Ming Yang Chen, Wei Shiuan Huang, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (R_S) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p⁺-Si)/indium devices. A gold/PMMA:BP/p⁺-Si/indium device exhibits R_S behavior, but a gold/PMMA/p⁺-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p⁺-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the R_S performance for gold/PMMA:BP/p⁺-Si/indium devices.

Original language	English
Journal	Indian Journal of Physics
DOIs	https://doi.org/10.1007/s12648-020-01818-z
Publication status	Accepted/In press - 2020

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1007/s12648-020-01818-z

Fingerprint Dive into the research topics of 'Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)'. Together they form a unique fingerprint.

Cite this

@article{3395d9cbf03149aea44f71198dce98be,

title = "Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)",

abstract = "This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p+-Si)/indium devices. A gold/PMMA:BP/p+-Si/indium device exhibits RS behavior, but a gold/PMMA/p+-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p+-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the RS performance for gold/PMMA:BP/p+-Si/indium devices.",

author = "Su, {Ting Hong} and Chen, {Ming Yang} and Huang, {Wei Shiuan} and Lin, {Yow Jon}",

year = "2020",

doi = "10.1007/s12648-020-01818-z",

language = "English",

journal = "Indian Journal of Physics",

issn = "0252-9262",

publisher = "Indian Physical Society",

}

TY - JOUR

T1 - Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

AU - Su, Ting Hong

AU - Chen, Ming Yang

AU - Huang, Wei Shiuan

AU - Lin, Yow Jon

PY - 2020

Y1 - 2020

N2 - This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p+-Si)/indium devices. A gold/PMMA:BP/p+-Si/indium device exhibits RS behavior, but a gold/PMMA/p+-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p+-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the RS performance for gold/PMMA:BP/p+-Si/indium devices.

AB - This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p+-Si)/indium devices. A gold/PMMA:BP/p+-Si/indium device exhibits RS behavior, but a gold/PMMA/p+-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p+-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the RS performance for gold/PMMA:BP/p+-Si/indium devices.

UR - http://www.scopus.com/inward/record.url?scp=85089094451&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85089094451&partnerID=8YFLogxK

U2 - 10.1007/s12648-020-01818-z

DO - 10.1007/s12648-020-01818-z

M3 - Article

AN - SCOPUS:85089094451

JO - Indian Journal of Physics

JF - Indian Journal of Physics

SN - 0252-9262

ER -