Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices

Yow-Jon Lin, Yu Ju Chu

Research output: Contribution to journalArticle

Abstract

Bipolar switching phenomenon is found for Au/n-type CuAlOx/heavily doped p-type Si devices at temperatures above 220 K. For high or low resistive states (HRS or LRS), the electrical resistance is decreased with increasing temperature, indicating a semiconducting behavior. Carrier transport at LRS or HRS is dominated by hopping conduction. It is reasonable to conclude that the transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VO trap sites. The disappearance of the resistive switching behavior below 220 K is attributed to the immobile VO traps. The deep understanding of conduction mechanism could help to control the device performance.

Original languageEnglish
Pages (from-to)31-36
Number of pages6
JournalMicroelectronics Reliability
Volume63
DOIs
Publication statusPublished - 2016 Aug 1

Fingerprint

traps
conduction
Acoustic impedance
Carrier transport
Oxygen vacancies
electrical resistance
Temperature
temperature
Electrons
oxygen
electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "Bipolar switching phenomenon is found for Au/n-type CuAlOx/heavily doped p-type Si devices at temperatures above 220 K. For high or low resistive states (HRS or LRS), the electrical resistance is decreased with increasing temperature, indicating a semiconducting behavior. Carrier transport at LRS or HRS is dominated by hopping conduction. It is reasonable to conclude that the transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VO trap sites. The disappearance of the resistive switching behavior below 220 K is attributed to the immobile VO traps. The deep understanding of conduction mechanism could help to control the device performance.",
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Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices. / Lin, Yow-Jon; Chu, Yu Ju.

In: Microelectronics Reliability, Vol. 63, 01.08.2016, p. 31-36.

Research output: Contribution to journalArticle

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AB - Bipolar switching phenomenon is found for Au/n-type CuAlOx/heavily doped p-type Si devices at temperatures above 220 K. For high or low resistive states (HRS or LRS), the electrical resistance is decreased with increasing temperature, indicating a semiconducting behavior. Carrier transport at LRS or HRS is dominated by hopping conduction. It is reasonable to conclude that the transition from HRS to LRS due to the migration of oxygen vacancies (VO) is associated with electron hopping mediated through the VO trap sites. The disappearance of the resistive switching behavior below 220 K is attributed to the immobile VO traps. The deep understanding of conduction mechanism could help to control the device performance.

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