Abstract
Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.
| Original language | English |
|---|---|
| Pages (from-to) | 6298-6305 |
| Number of pages | 8 |
| Journal | Journal of Applied Physics |
| Volume | 96 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2004 Dec 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
}
Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures. / Chen, T. H.; Huang, Y. S.; Lin, D. Y.; Tiong, K. K.
In: Journal of Applied Physics, Vol. 96, No. 11, 01.12.2004, p. 6298-6305.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures
AU - Chen, T. H.
AU - Huang, Y. S.
AU - Lin, D. Y.
AU - Tiong, K. K.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.
AB - Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.
UR - http://www.scopus.com/inward/record.url?scp=23944476035&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=23944476035&partnerID=8YFLogxK
U2 - 10.1063/1.1805724
DO - 10.1063/1.1805724
M3 - Article
AN - SCOPUS:23944476035
VL - 96
SP - 6298
EP - 6305
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
ER -