Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures

T. H. Chen, Y. S. Huang, D. Y. Lin, K. K. Tiong

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.

Original languageEnglish
Pages (from-to)6298-6305
Number of pages8
JournalJournal of Applied Physics
Volume96
Issue number11
DOIs
Publication statusPublished - 2004 Dec 1

Fingerprint

quantum wells
photoluminescence
nitrogen
oscillations
temperature
conduction bands
modulation
temperature dependence
electric fields
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{0158ee8d72984b88b1d594b11e65cda3,
title = "Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures",
abstract = "Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0{\%}, 0.6{\%}, and 0.9{\%}) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.",
author = "Chen, {T. H.} and Huang, {Y. S.} and Lin, {D. Y.} and Tiong, {K. K.}",
year = "2004",
month = "12",
day = "1",
doi = "10.1063/1.1805724",
language = "English",
volume = "96",
pages = "6298--6305",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures. / Chen, T. H.; Huang, Y. S.; Lin, D. Y.; Tiong, K. K.

In: Journal of Applied Physics, Vol. 96, No. 11, 01.12.2004, p. 6298-6305.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs/GaAs single quantum well structures

AU - Chen, T. H.

AU - Huang, Y. S.

AU - Lin, D. Y.

AU - Tiong, K. K.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.

AB - Ga0.69In0.31NxAs1-x/GaAs single quantum well (SQW) structures with three different nitrogen compositions (x=0%, 0.6%, and 0.9%) have been characterized, as functions of temperature in the range 10-300 K, by the techniques of photoreflectance (PR) and photoluminescence (PL). In PR spectra, clear Franz-Keldysh oscillations (FKOs) above the GaAs band edge and the various excitonic transitions originating from the QW region have been observed. The built-in electric field in the SQW has been determined from FKOs and found to increase with N concentration. The PR signal has been found to decrease for nitrogen incorporated samples when the temperature was lowered due to a weakening of the modulation efficiency induced by carrier localization. A careful analysis of PR and PL spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The anomalous temperature dependent 11H transition energy and linewidth observed in the PL spectra have been explained as originating from the localized states as a result of nitrogen incorporation. The temperature dependence analysis yields information on the parameters that describe the temperature variations of the interband transitions.

UR - http://www.scopus.com/inward/record.url?scp=23944476035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23944476035&partnerID=8YFLogxK

U2 - 10.1063/1.1805724

DO - 10.1063/1.1805724

M3 - Article

AN - SCOPUS:23944476035

VL - 96

SP - 6298

EP - 6305

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -