Temperature dependent optical properties of the InGaN semiconductor materials: Experimental and numerical studies

Yen-Kuang Kuo, Jih-Yuan Chang, Kuo Kai Horng, Ya Lien Huang, Yuni Chang, Hsu Ching Huang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.

Original languageEnglish
Pages (from-to)579-586
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
Publication statusPublished - 2000 Jan 1

Fingerprint

InGaN
Quantum Well
Optical Properties
Semiconductor quantum wells
Numerical Study
Semiconductors
Experimental Study
Optical properties
quantum wells
Semiconductor materials
optical properties
Dependent
Photoluminescence
Semiconductor lasers
Wavelength
photoluminescence
Bending (forming)
Temperature
Indium
temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

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abstract = "The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.",
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Temperature dependent optical properties of the InGaN semiconductor materials : Experimental and numerical studies. / Kuo, Yen-Kuang; Chang, Jih-Yuan; Horng, Kuo Kai; Huang, Ya Lien; Chang, Yuni; Huang, Hsu Ching.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 579-586.

Research output: Contribution to journalArticle

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AU - Kuo, Yen-Kuang

AU - Chang, Jih-Yuan

AU - Horng, Kuo Kai

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AU - Chang, Yuni

AU - Huang, Hsu Ching

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