Abstract
The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.
| Original language | English |
|---|---|
| Pages (from-to) | 579-586 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4078 |
| Publication status | Published - 2000 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Condensed Matter Physics
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Temperature dependent optical properties of the InGaN semiconductor materials : Experimental and numerical studies. / Kuo, Yen-Kuang; Chang, Jih-Yuan; Horng, Kuo Kai; Huang, Ya Lien; Chang, Yuni; Huang, Hsu Ching.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 579-586.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature dependent optical properties of the InGaN semiconductor materials
T2 - Experimental and numerical studies
AU - Kuo, Yen-Kuang
AU - Chang, Jih-Yuan
AU - Horng, Kuo Kai
AU - Huang, Ya Lien
AU - Chang, Yuni
AU - Huang, Hsu Ching
PY - 2000/1/1
Y1 - 2000/1/1
N2 - The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.
AB - The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.
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M3 - Article
AN - SCOPUS:0033720909
VL - 4078
SP - 579
EP - 586
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
ER -