Temperature dependent optical properties of the InGaN semiconductor materials: Experimental and numerical studies

Yen Kuang Kuo, Jih Yuan Chang, Kuo Kai Horng, Ya Lien Huang, Yuni Chang, Hsu Ching Huang

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The InGaN semiconductor materials have important applications in short-wavelength light emitting diodes and semiconductor lasers. In this work, we study the optical properties of a single quantum well and a multiple quantum well InGaN devices experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Important optical parameters such as the peak wavelength, the emission intensity, and the bandwidth of the photoluminescence spectra at various temperatures and pump power levels are characterized and compared to the results obtained from the Lastip numerical simulation. The effects of the indium concentration in quantum well, the well width, and the bowing parameter on the optical properties of the InGaN quantum well structures are also studied numerically with the Lastip simulation program. Good agreement between the experimental and numerical results is observed.

Original languageEnglish
Pages (from-to)579-586
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
DOIs
Publication statusPublished - 2000 Jan 1
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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