Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2Sx treatment

Yow-Jon Lin, Cheng Chun Hung

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2 Citations (Scopus)

Abstract

The effect of a SiO2 gate dielectric modified by (NH4)2Sx treatment on the temperature-dependent hole transport behavior for pentacene-based organic thin-film transistors (OTFTs) is studied. (NH4)2Sx treatment leads to the formation of S[sbnd]Si bonds (i.e., the formation of a sulfurated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance, increasing the value of the hole mobility in OTFTs. The temperature-dependent hole transport is dominated by the multiple trapping model. It is shown that (NH4)2Sx treatment leads to a reduction in the activation energy, resulting from the formation of a sulfurated layer at the pentacene/SiO2 interface that serves to suppress the pentacene-SiO2 interaction. (NH4)2Sx treatment provides an opportunity to realize the stable and reliable carrier conduction behavior for OTFTs.

Original languageEnglish
Pages (from-to)90-94
Number of pages5
JournalMicroelectronics Reliability
Volume81
DOIs
Publication statusPublished - 2018 Feb 1

Fingerprint

Gate dielectrics
Thin film transistors
transistors
thin films
Hole mobility
Temperature
temperature
hole mobility
Capacitance
Activation energy
capacitance
trapping
activation energy
conduction
pentacene
interactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "The effect of a SiO2 gate dielectric modified by (NH4)2Sx treatment on the temperature-dependent hole transport behavior for pentacene-based organic thin-film transistors (OTFTs) is studied. (NH4)2Sx treatment leads to the formation of S[sbnd]Si bonds (i.e., the formation of a sulfurated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance, increasing the value of the hole mobility in OTFTs. The temperature-dependent hole transport is dominated by the multiple trapping model. It is shown that (NH4)2Sx treatment leads to a reduction in the activation energy, resulting from the formation of a sulfurated layer at the pentacene/SiO2 interface that serves to suppress the pentacene-SiO2 interaction. (NH4)2Sx treatment provides an opportunity to realize the stable and reliable carrier conduction behavior for OTFTs.",
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T1 - Temperature-dependent hole transport for pentacene thin-film transistors with a SiO2 gate dielectric modified by (NH4)2Sx treatment

AU - Lin, Yow-Jon

AU - Hung, Cheng Chun

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N2 - The effect of a SiO2 gate dielectric modified by (NH4)2Sx treatment on the temperature-dependent hole transport behavior for pentacene-based organic thin-film transistors (OTFTs) is studied. (NH4)2Sx treatment leads to the formation of S[sbnd]Si bonds (i.e., the formation of a sulfurated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance, increasing the value of the hole mobility in OTFTs. The temperature-dependent hole transport is dominated by the multiple trapping model. It is shown that (NH4)2Sx treatment leads to a reduction in the activation energy, resulting from the formation of a sulfurated layer at the pentacene/SiO2 interface that serves to suppress the pentacene-SiO2 interaction. (NH4)2Sx treatment provides an opportunity to realize the stable and reliable carrier conduction behavior for OTFTs.

AB - The effect of a SiO2 gate dielectric modified by (NH4)2Sx treatment on the temperature-dependent hole transport behavior for pentacene-based organic thin-film transistors (OTFTs) is studied. (NH4)2Sx treatment leads to the formation of S[sbnd]Si bonds (i.e., the formation of a sulfurated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance, increasing the value of the hole mobility in OTFTs. The temperature-dependent hole transport is dominated by the multiple trapping model. It is shown that (NH4)2Sx treatment leads to a reduction in the activation energy, resulting from the formation of a sulfurated layer at the pentacene/SiO2 interface that serves to suppress the pentacene-SiO2 interaction. (NH4)2Sx treatment provides an opportunity to realize the stable and reliable carrier conduction behavior for OTFTs.

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