Abstract
The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(–OH)x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene–SiO2 interaction, thus increasing the field-effect carrier mobility (µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.
| Original language | English |
|---|---|
| Article number | 173 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 124 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2018 Feb 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
Cite this
}
Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment. / Lin, Yow-Jon; Hung, Cheng Chun.
In: Applied Physics A: Materials Science and Processing, Vol. 124, No. 2, 173, 01.02.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment
AU - Lin, Yow-Jon
AU - Hung, Cheng Chun
PY - 2018/2/1
Y1 - 2018/2/1
N2 - The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(–OH)x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene–SiO2 interaction, thus increasing the field-effect carrier mobility (µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.
AB - The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(–OH)x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene–SiO2 interaction, thus increasing the field-effect carrier mobility (µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.
UR - http://www.scopus.com/inward/record.url?scp=85040979527&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85040979527&partnerID=8YFLogxK
U2 - 10.1007/s00339-018-1597-2
DO - 10.1007/s00339-018-1597-2
M3 - Article
AN - SCOPUS:85040979527
VL - 124
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 2
M1 - 173
ER -