Abstract
The temperature-dependent current–voltage (I–V) characteristics of graphene/n-type Si Schottky diodes with and without sulfide treatment were measured in the temperature range of 150–420 K. The temperature dependence of forward-bias I–V characteristics can be explained on the basis of the thermionic emission theory by assuming the presence of Gaussian distribution of the barrier heights. The graphene/n-type Si device with sulfide treatment exhibits a good rectifying behavior with the ideality factor of 1.8 and low leakage at 300 K. The enhanced device performance is considered to mainly come from the presence of Si–S bonds that serve to improve the Schottky barrier inhomogeneity. Compared to the fitting data for the temperature-dependent reverse-bias I–V characteristics of graphene/n-type Si devices without sulfide treatment, the fitting data for the temperature-dependent reverse-bias I–V characteristics of graphene/n-type Si devices with sulfide treatment show that a higher barrier height for hopping result in a lower leakage current. This is because of more homogenous barrier height for graphene/n-type Si devices with sulfide treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 353-359 |
| Number of pages | 7 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 118 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment. / Lin, Yow Jon; Zeng, Jian Jhou; Chang, Hsing Cheng.
In: Applied Physics A: Materials Science and Processing, Vol. 118, No. 1, 01.01.2014, p. 353-359.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment
AU - Lin, Yow Jon
AU - Zeng, Jian Jhou
AU - Chang, Hsing Cheng
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The temperature-dependent current–voltage (I–V) characteristics of graphene/n-type Si Schottky diodes with and without sulfide treatment were measured in the temperature range of 150–420 K. The temperature dependence of forward-bias I–V characteristics can be explained on the basis of the thermionic emission theory by assuming the presence of Gaussian distribution of the barrier heights. The graphene/n-type Si device with sulfide treatment exhibits a good rectifying behavior with the ideality factor of 1.8 and low leakage at 300 K. The enhanced device performance is considered to mainly come from the presence of Si–S bonds that serve to improve the Schottky barrier inhomogeneity. Compared to the fitting data for the temperature-dependent reverse-bias I–V characteristics of graphene/n-type Si devices without sulfide treatment, the fitting data for the temperature-dependent reverse-bias I–V characteristics of graphene/n-type Si devices with sulfide treatment show that a higher barrier height for hopping result in a lower leakage current. This is because of more homogenous barrier height for graphene/n-type Si devices with sulfide treatment.
AB - The temperature-dependent current–voltage (I–V) characteristics of graphene/n-type Si Schottky diodes with and without sulfide treatment were measured in the temperature range of 150–420 K. The temperature dependence of forward-bias I–V characteristics can be explained on the basis of the thermionic emission theory by assuming the presence of Gaussian distribution of the barrier heights. The graphene/n-type Si device with sulfide treatment exhibits a good rectifying behavior with the ideality factor of 1.8 and low leakage at 300 K. The enhanced device performance is considered to mainly come from the presence of Si–S bonds that serve to improve the Schottky barrier inhomogeneity. Compared to the fitting data for the temperature-dependent reverse-bias I–V characteristics of graphene/n-type Si devices without sulfide treatment, the fitting data for the temperature-dependent reverse-bias I–V characteristics of graphene/n-type Si devices with sulfide treatment show that a higher barrier height for hopping result in a lower leakage current. This is because of more homogenous barrier height for graphene/n-type Si devices with sulfide treatment.
UR - http://www.scopus.com/inward/record.url?scp=85027922239&partnerID=8YFLogxK
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U2 - 10.1007/s00339-014-8740-5
DO - 10.1007/s00339-014-8740-5
M3 - Article
AN - SCOPUS:85027922239
VL - 118
SP - 353
EP - 359
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 1
ER -